參數(shù)資料
型號(hào)： M29W008B
廠商： 意法半導(dǎo)體
英文描述： 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導(dǎo)入塊)低壓?jiǎn)坞娫撮W速存儲(chǔ)器)
中文描述： 8兆（1兆× 8，引導(dǎo)塊）低電壓?jiǎn)坞娫纯扉W記憶體（8米位（1兆× 8，導(dǎo)入塊），低壓?jiǎn)坞娫撮W速存儲(chǔ)器）
文件頁(yè)數(shù)： 24/30頁(yè)
文件大?。?/td> 197K
代理商： M29W008B
Sym-
bol
Parameter
M29W008T / M29W008B
Unit
-90
-100
V
CC
= 3.0V to 3.6V
C
L
= 30pF
V
CC
= 2.7V to 3.6V
C
L
= 30pF
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
1.0
60
1.0
60
sec
t
EHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
10
2400
10
2400
μ
s
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
1.0
60
1.0
60
sec
t
Q7VQV
Q7 Valid to Output Valid(Data Polling)
35
40
ns
t
WHQV
Write Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Write Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
t
EHQV
Chip Enable High to Output Valid(Program)
10
2400
10
2400
μ
s
Chip Enable High to Output Valid(Chip Erase)
1.0
60
1.0
60
sec
Note:
1. All other timings are defined in ReadAC Characteristics table.
Table 17A. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to85
°
C)
Sym-
bol
Parameter
M29W008T / M29W008B
Unit
-120
-150
V
CC
= 2.7V to 3.6V
C
L
= 100pF
V
CC
= 2.7V to 3.6V
C
L
= 100pF
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
1.0
60
1.0
60
sec
t
EHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
10
2400
10
2400
μ
s
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
1.0
60
1.0
60
sec
t
Q7VQV
Q7 Valid to Output Valid(Data Polling)
50
55
ns
t
WHQV
Write Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Write Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
t
EHQV
Chip Enable High to Output Valid(Program)
10
2400
10
2400
μ
s
Chip Enable High to Output Valid(Chip Erase)
1.0
60
1.0
60
sec
Note:
1. All other timings are defined in ReadAC Characteristics table.
Table 17B. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to85
°
C)
24/30
M29W008T, M29W008B
相關(guān)PDF資料
PDF描述
M29W010B45K6F 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W010B45N1 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W010B45N1E 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W010B45N1F 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W010B45N3 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W008B-100N1TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008B-100N5TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008B-100N6TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008B-120N1TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008B-120N5TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
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