參數(shù)資料
型號(hào): M29W008B
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導(dǎo)入塊)低壓?jiǎn)坞娫撮W速存儲(chǔ)器)
中文描述: 8兆(1兆× 8,引導(dǎo)塊)低電壓?jiǎn)坞娫纯扉W記憶體(8米位(1兆× 8,導(dǎo)入塊),低壓?jiǎn)坞娫撮W速存儲(chǔ)器)
文件頁(yè)數(shù): 6/30頁(yè)
文件大?。?/td> 197K
代理商: M29W008B
Address Range
A19
A18
A17
A16
A15
A14
A13
00000h-0FFFFh
0
0
0
0
X
X
X
10000h-1FFFFh
0
0
0
1
X
X
X
20000h-2FFFFh
0
0
1
0
X
X
X
30000h-3FFFFh
0
0
1
1
X
X
X
40000h-4FFFFh
0
1
0
0
X
X
X
50000h-5FFFFh
0
1
0
1
X
X
X
60000h-6FFFFh
0
1
1
0
X
X
X
70000h-7FFFFh
0
1
1
1
X
X
X
80000h-8FFFFh
1
0
0
0
X
X
X
90000h-9FFFFh
1
0
0
1
X
X
X
A0000h-AFFFFh
1
0
1
0
X
X
X
B0000h-BFFFFh
1
0
1
1
X
X
X
C0000h-CFFFFh
1
1
0
0
X
X
X
D0000h-DFFFFh
1
1
0
1
X
X
X
E0000h-EFFFFh
1
1
1
0
X
X
X
F0000h-F7FFFh
1
1
1
1
0
X
X
F8000h-F9FFFh
1
1
1
1
1
0
0
FA000h-FBFFFh
1
1
1
1
1
0
1
FC000h-FFFFFh
1
1
1
1
1
1
X
Table3A. M29W008TBlock Address Table
Output Enable (G).
The Output Enable gatesthe
outputs through the data buffers during a read
operation. When G is High the outputs are High
impedance. G must be forced to V
ID
level during
BlockProtectionand Unprotectionoperations.
WriteEnable(W).
Thisinputcontrolswritingto the
CommandRegisterandAddressandDatalatches.
Ready/Busy Output (RB).
Ready/Busy is an
open-drainoutputandgivestheinternalstateofthe
P/E.C. of the device. When RB is Low, the device
is Busy with a Program or Erase operation and it
will not accept any additional program or erase
instructionsexcept the Erase Suspendinstruction.
WhenRBis High,thedeviceis readyforanyRead,
Program or Erase operation. The RB will also be
Highwhen the memoryis putin Erase Suspendor
Standbymodes.
Reset/Block Temporary Unprotect Input (RP).
The RP Input provides hardware reset and pro-
tected block(s) temporary unprotection functions.
Reset of the memory is acheived by pulling RP to
V
IL
forat leastt
PLPX
. Whentheresetpulseis given,
if the memoryis in Read or Standbymodes, it will
be available for new operations in t
PHEL
after the
rising edge of RP.
6/30
M29W008T, M29W008B
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