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參數(shù)資料
| 型號： | M29W008B |
| 廠商： | 意法半導體 |
| 英文描述： | 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導入塊)低壓單電源閃速存儲器) |
| 中文描述： | 8兆（1兆× 8，引導塊）低電壓單電源快閃記憶體（8米位（1兆× 8，導入塊），低壓單電源閃速存儲器） |
| 文件頁數(shù)： | 19/30頁 |
| 文件大?。?/td> | 197K |
| 代理商： | M29W008B |
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Symbol
Alt
Parameter
M29W008T / M29W008B
Unit
-120
-150
V
CC
= 2.7V to 3.6V
V
CC
= 2.7Vto 3.6V
Min
Max
Min
Max
t
AVAV
t
WC
Address Validto Next Address Valid
120
150
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
0
0
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
50
65
ns
t
DVWH
t
DS
Input Valid to Write Enable High
50
65
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
30
35
ns
t
AVWL
t
AS
Address Valid to Write Enable Low
0
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
50
65
ns
t
GHWL
Output Enable High to Write Enable Low
0
0
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
50
50
μ
s
t
WHGL
t
OEH
Write Enable High to Output Enable Low
0
0
ns
t
PHPHH
(1,2)
t
VIDR
RP Rise Timeto V
ID
500
500
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
WHRL
(1)
t
BUSY
Program Erase Valid to RB Delay
90
90
ns
t
PHWL(1)
t
RSP
RP High to Write Enable Low
4
4
μ
s
Notes:
1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotectionoperation.
Table15B. Write AC Characteristics,Write Enable Controlled
(T
A
= 0 to 70
°
C, –20 to 85
°
C or–40 to 85
°
C)
Duringtheexecutionof theerasebytheP/E.C.,the
memory accepts onlythe Erase SuspendES and
Read/Reset RD instructions.Data Polling bit DQ7
returns ’0’ while the erasure is in progress and ’1’
when it has completed. The Toggle bit DQ2 and
DQ6 toggleduring the erase operation.They stop
when erase is completed. After completion the
StatusRegisterbitDQ5returns’1’if therehasbeen
an erase failure. In such a situation,the Toggle bit
DQ2 can be used to determine which block is not
correctly erased. In the case of erase failure, a
Read/ResetRD instructionis necessaryin orderto
reset the P/E.C.
ChipErase(CE)Instruction.
Thisinstructionuses
six write cycles. The Erase Set-up command 80h
is written to address5555h on the third cycle after
the two Coded cycles. The Chip Erase Confirm
command10h is similarlywritten on thesixthcycle
after another two Coded cycles. If the second
command given is not an erase confirm or if the
Codedcyclesarewrong,theinstructionabortsand
thedeviceisresettoReadArray.Itisnotnecessary
toprogramthearraywith00hfirstastheP/E.C.will
automaticallydothisbeforeerasingit toFFh.Read
operations after the sixth rising edge of W or E
output the Status Register bits. During the execu-
tionof theerasebytheP/E.C.,DataPollingbitDQ7
returns ’0’, then ’1’ on completion. The Togglebits
DQ2 and DQ6 toggle during erase operation and
stopwheneraseiscompleted.Aftercompletionthe
StatusRegisterbitDQ5returns’1’iftherehasbeen
an Erase Failure.
19/30
M29W008T M29W008B
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M29W008B-100N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008B-100N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008B-100N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008B-120N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008B-120N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
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