參數(shù)資料
型號: M29W008B
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導(dǎo)入塊)低壓單電源閃速存儲器)
中文描述: 8兆(1兆× 8,引導(dǎo)塊)低電壓單電源快閃記憶體(8米位(1兆× 8,導(dǎo)入塊),低壓單電源閃速存儲器)
文件頁數(shù): 7/30頁
文件大?。?/td> 197K
代理商: M29W008B
Address Range
A19
A18
A17
A16
A15
A14
A13
00000h-03FFFh
0
0
0
0
0
0
X
04000h-05FFFh
0
0
0
0
0
1
0
06000h-07FFFh
0
0
0
0
0
1
1
08000h-0FFFFh
0
0
0
0
1
X
X
10000h-1FFFFh
0
0
0
1
X
X
X
20000h-2FFFFh
0
0
1
0
X
X
X
30000h-3FFFFh
0
0
1
1
X
X
X
40000h-4FFFFh
0
1
0
0
X
X
X
50000h-5FFFFh
0
1
0
1
X
X
X
60000h-6FFFFh
0
1
1
0
X
X
X
70000h-7FFFFh
0
1
1
1
X
X
X
80000h-8FFFFh
1
0
0
0
1
X
X
90000h-9FFFFh
1
0
0
1
X
X
X
A0000h-AFFFFh
1
0
1
0
X
X
X
B0000h-BFFFFh
1
0
1
1
X
X
X
C0000h-CFFFFh
1
1
0
0
X
X
X
D0000h-DFFFFh
1
1
0
1
X
X
X
E0000h-6FFFFh
1
1
1
0
X
X
X
F0000h-FFFFFh
1
1
1
1
X
X
X
Table3B. M29W008BBlock Address Table
If the memory is in Erase, Erase Suspendor Pro-
gram modes the reset will take t
PLYH
during which
the RB signal will be held at V
IL
. The end of the
memory reset will be indicated by the rising edge
of RB. A hardware reset during an Erase or Pro-
gram operation will corrupt the data being pro-
grammedor thesector(s) beingerased.See Table
14 and Figure9.
Temporary block unprotection is made by holding
RP at V
ID
. In this condition previously protected
blocks can be programmed or erased. The transi-
tionof RPfrom V
IH
to V
ID
mustslower thant
PHPHH
.
(SeeTable15 and Figure9). WhenRP is returned
from V
ID
to V
IH
all blocks temporarily unprotected
will be again protected.
V
CC
Supply Voltage.
The power supply for all
operations(Read, Program and Erase).
V
SS
Ground.
V
SS
is the reference for all voltage
measurements.
7/30
M29W008T M29W008B
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