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參數(shù)資料
| 型號(hào)： | M29W008B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導(dǎo)入塊)低壓?jiǎn)坞娫撮W速存儲(chǔ)器) |
| 中文描述： | 8兆（1兆× 8，引導(dǎo)塊）低電壓?jiǎn)坞娫纯扉W記憶體（8米位（1兆× 8，導(dǎo)入塊），低壓?jiǎn)坞娫撮W速存儲(chǔ)器） |
| 文件頁數(shù)： | 20/30頁 |
| 文件大?。?/td> | 197K |
| 代理商： | M29W008B |
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AI02192
E
G
W
A0-A19
DQ0-DQ7
VALID
VALID
VCC
tVCHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWH
tGHWL
RB
tWHRL
Figure 7. WriteAC Waveforms, W Controlled
Note:
Address are latched on the falling edge of W, Datais latched on the rising edge of W.
Erase Suspend (ES) Instruction.
The Block
Eraseoperationmay besuspendedbythisinstruc-
tion which consists of writing the command B0h
without anyspecificaddress.No Codedcyclesare
required. It permits reading of data from another
block and programming in another block while an
erase operation is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution. Writing this command during Erase
timeout will, in addition to suspending the erase,
terminate the timeout. The Toggle bit DQ6 stops
togglingwhentheP/E.C.is suspended.The Toggle
bitswill stoptogglingbetween0.1
μ
sand15
μ
s after
the Erase Suspend (ES) command has been writ-
ten. The device will then automatically be set to
Read Memory Array mode. When erase is sus-
pended, a Read from blocks being erased will
output DQ2 togglingand DQ6 at ’1’. A Read from
a blocknot beingerasedreturnsvalid data.During
suspension the memory will respond only to the
Erase Resume ER and the Program PG instruc-
tions. AProgram operation can be initiatedduring
erase suspend in one of the blocks not being
erased. Itwillresultin bothDQ2and DQ6toggling
whenthedatais beingprogrammed.ARead/Reset
command will definitively abort erasure and result
in invalid data in the blocks being erased.
EraseResume(ER)Instruction.
Ifan EraseSus-
pend instruction was previously executed, the
erase operation may be resumed by giving the
command 30h, at any address, and without any
Codedcycles.
20/30
M29W008T, M29W008B
相關(guān)PDF資料 |
PDF描述 |
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| M29W010B45K6F | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W010B45N1 | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W010B45N1E | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W010B45N1F | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W010B45N3 | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W008B-100N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008B-100N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008B-100N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008B-120N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008B-120N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
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