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參數(shù)資料
| 型號： | M29W004T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb閃速存儲器) |
| 中文描述： | 的4Mb（512KB的× 8，引導(dǎo)塊）低電壓單電源閃存（4Mb的閃速存儲器） |
| 文件頁數(shù)： | 1/30頁 |
| 文件大?。?/td> | 199K |
| 代理商： | M29W004T |
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AI02063
19
A0-A18
W
DQ0-DQ7
VCC
M29W004T
M29W004B
E
VSS
8
G
RP
RB
Figure 1. LogicDiagram
M29W004T
M29W004B
4 Mbit (512Kb x8, Boot Block)
Low Voltage Single Supply Flash Memory
2.7V to 3.6VSUPPLYVOLTAGEfor
PROGRAM, ERASEand READ OPERATIONS
FASTACCESS TIME: 100ns
FASTPROGRAMMING TIME:10
μ
s typical
PROGRAM/ERASECONTROLLER (P/E.C.)
– ProgramByte-by-Byte
– StatusRegister bits and Ready/BusyOutput
MEMORYBLOCKS
– BootBlock (Top or Bottomlocation)
– Parameterand Main blocks
BLOCK, MULTI-BLOCKand CHIPERASE
MULTI BLOCKPROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program anotherBlockduring
Erase Suspend
LOW POWER CONSUMPTION
– Stand-byand AutomaticStand-by
100,000 PROGRAM/ERASECYCLES per
BLOCK
20 YEARSDATARETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– Device Code, M29W004T:EAh
– Device Code, M29W004B:EBh
DESCRIPTION
The M29W004 is a non-volatilememory that may
be erasedelectricallyat theblock or chipleveland
programmed in-system on a Byte-by-Byte basis
using only a single 2.7V to 3.6V V
CC
supply. For
Programand Erase operationsthe necessaryhigh
voltagesare generated internally. The device can
also be programmedin standard programmers.
The arraymatrix organisationallows each blockto
be erased and reprogrammed without affecting
otherblocks. Blocks can be protectedagainst pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application. Each block can be programmed
and erased over 100,000 cycles.
October 1998
1/30
TSOP40 (N)
10 x 20 mm
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| M29W008B | 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導(dǎo)入塊)低壓單電源閃速存儲器) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W004T-100N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004T-100N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004T-100N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004T-120N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004T-120N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
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