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參數(shù)資料
| 型號(hào)： | M29W004T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb閃速存儲(chǔ)器) |
| 中文描述： | 的4Mb（512KB的× 8，引導(dǎo)塊）低電壓?jiǎn)坞娫撮W存（4Mb的閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 14/30頁 |
| 文件大?。?/td> | 199K |
| 代理商： | M29W004T |
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Symbol
Alt
Parameter
Test
Condition
M29W004T / M29W004B
Unit
-120
-150
V
CC
= 2.7V to 3.6V
V
CC
= 2.7V to 3.6V
Min
Max
Min
Max
t
AVAV
t
RC
Address Validto Next Address Valid
E = V
IL
,
G = V
IL
120
150
ns
t
AVQV
t
ACC
Address Validto Output Valid
E = V
IL
,
G = V
IL
120
150
ns
t
ELQX(1)
t
ELQV(2)
t
LZ
Chip Enable Low to Output Transition
G = V
IL
0
0
ns
t
CE
Chip Enable Low to Output Valid
G = V
IL
120
150
ns
t
GLQX(1)
t
OLZ
Output Enable Low to Output
Transition
E = V
IL
0
0
ns
t
GLQV(2)
t
OE
Output Enable Low to Output Valid
E = V
IL
50
55
ns
t
EHQX
t
OH
Chip Enable High to Output Transition
G = V
IL
0
0
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
30
40
ns
t
GHQX
t
OH
Output Enable High to Output
Transition
E = V
IL
0
0
ns
t
GHQZ(1)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
30
40
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
,
G = V
IL
0
0
ns
t
PLYH(1,3)
t
RRB
t
READY
RP Low to Read Mode
10
10
μ
s
t
PHEL
t
RH
RP High to Chip Enable Low
50
50
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
Notes:
1. Sampled only, not 100%tested.
2. G may be delayed by up tot
- t
afterthe falling edge of E without increasing t
ELQV
.
3. Tobe considered only if the Reset pulse is given while the memory is in Erase mode.
Table 14B. Read AC Characteristics
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to85
°
C)
14/30
M29W004T, M29W004B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W008AB | 8Mbit(1Mbx8, Boot Block) Low Voltage Single Supply Flash Memory(8Mb閃速存儲(chǔ)器) |
| M29W008AT | 8Mbit(1Mbx8, Boot Block) Low Voltage Single Supply Flash Memory(8Mb閃速存儲(chǔ)器) |
| M29W008B | 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導(dǎo)入塊)低壓?jiǎn)坞娫撮W速存儲(chǔ)器) |
| M29W010B45K6F | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W010B45N1 | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W004T-100N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004T-100N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004T-100N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004T-120N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004T-120N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
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