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參數(shù)資料
| 型號： | M29W004T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb閃速存儲(chǔ)器) |
| 中文描述： | 的4Mb（512KB的× 8，引導(dǎo)塊）低電壓單電源閃存（4Mb的閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 16/30頁 |
| 文件大小： | 199K |
| 代理商： | M29W004T |
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Symbol
Alt
Parameter
M29W004T / M29W004B
Unit
-90
-100
V
CC
= 3.0V to 3.6V
C
L
= 30pF
V
CC
= 2.7V to 3.6V
C
L
= 30pF
Min
Max
Min
Max
t
AVAV
t
WC
Address Validto Next Address Valid
90
100
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
0
0
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
45
50
ns
t
DVWH
t
DS
Input Valid to Write Enable High
45
50
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
30
30
ns
t
AVWL
t
AS
Address Valid to Write Enable Low
0
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
45
50
ns
t
GHWL
Output Enable High to Write Enable Low
0
0
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
50
50
μ
s
t
WHGL
t
OEH
Write Enable High to Output Enable Low
0
0
ns
t
PHPHH
(1,2)
t
VIDR
RP Rise Timeto V
ID
500
500
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
WHRL
(1)
t
BUSY
Program Erase Valid to RB Delay
90
90
ns
t
PHWL(1)
t
RSP
RP High to Write Enable Low
4
4
μ
s
Notes:
1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotectionoperation.
Table15A. Write AC Characteristics,Write Enable Controlled
(T
A
= 0 to 70
°
C, –20 to 85
°
C or–40 to 85
°
C)
Block Erase (BE) Instruction
. This instruction
uses a minimum of six write cycles. The Erase
Set-up command 80h is written to address 5555h
onthirdcycleafterthetwoCodedcycles.TheBlock
EraseConfirmcommand30hissimilarly writtenon
the sixth cycle after another two Coded cycles.
During the input of the second command an ad-
dress within the block to be erased is given and
latched into the memory. Additional block Erase
Confirm commands and block addresses can be
written subsequentlyto erase other blocks in par-
allel, without further Coded cycles. The erase will
start after the erase timeout period (see Erase
TimerBit DQ3 description).Thus,additionalErase
Confirmcommandsfor otherblocksmust be given
withinthisdelay.The inputof anew EraseConfirm
commandwillrestartthetimeoutperiod.The status
of the internal timer can be monitored throughthe
level of DQ3, if DQ3 is ’0’ the Block Erase Com-
mandhas beengivenand thetimeoutis running,if
DQ3is ’1’, the timeout has expiredand the P/E.C.
is erasing the Block(s). If the second command
givenis notaneraseconfirmor if theCodedcycles
arewrong,the instructionaborts,and thedeviceis
resetto ReadArray. It is not necessaryto program
the block with 00h as the P/E.C. will do this auto-
maticallybeforeto erasingto FFh.Readoperations
16/30
M29W004T, M29W004B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W008AB | 8Mbit(1Mbx8, Boot Block) Low Voltage Single Supply Flash Memory(8Mb閃速存儲(chǔ)器) |
| M29W008AT | 8Mbit(1Mbx8, Boot Block) Low Voltage Single Supply Flash Memory(8Mb閃速存儲(chǔ)器) |
| M29W008B | 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導(dǎo)入塊)低壓單電源閃速存儲(chǔ)器) |
| M29W010B45K6F | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W010B45N1 | 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W004T-100N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004T-100N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004T-100N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004T-120N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004T-120N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
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