參數(shù)資料
型號(hào)： M29W008AT
廠商： 意法半導(dǎo)體
英文描述： 8Mbit(1Mbx8, Boot Block) Low Voltage Single Supply Flash Memory(8Mb閃速存儲(chǔ)器)
中文描述： 8Mbit（1Mbx8，引導(dǎo)塊）低電壓?jiǎn)坞娫撮W存（8兆閃速存儲(chǔ)器）
文件頁數(shù)： 1/2頁
文件大?。?/td> 36K
代理商： M29W008AT
B29W008A/811
Complete data available on
DATA-on-DISC CD-ROM
or at
www.st.com
1/2
M29W008AT
M29W008AB
8 Mbit (1Mb x8, Boot Block)
Low Voltage Single Supply Flash Memory
DATA BRIEFING
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 80ns
FAST PROGRAMMING TIME: 10
μ
s typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Status Register bits and Ready/Busy Output
SECURITY PROTECTION MEMORY AREA
INSTRUCTIONS ADDRESS CODING: 3 digits
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M29W008AT: D2h
– Device Code, M29W008AB: DCh
DESCRIPTION
The M29W008A is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byte basis
using only a single 2.7V to 3.6V V
CC
supply. For
Program and Erase operations the necessary high
voltages are generated internally. The device can
also be programmed in standard programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application. Each block can be programmed
and erased over 100,000 cycles.
AI02716
20
A0-A19
W
DQ0-DQ7
VCC
M29W008AT
M29W008AB
E
VSS
8
G
RP
RB
Logic Diagram
TSOP40 (N)
10 x 20 mm
相關(guān)PDF資料
PDF描述
M29W008B 8 Mbit (1Mb x8, Boot Block) Low Voltage Single Supply Flash Memory(8 M位 (1Mb x8,導(dǎo)入塊)低壓?jiǎn)坞娫撮W速存儲(chǔ)器)
M29W010B45K6F 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W010B45N1 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W010B45N1E 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W010B45N1F 1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W008AT100N1 功能描述:閃存 TSOP-40 1MX8 100NS RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W008AT100N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008AT100N5T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008AT100N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008AT120N1 功能描述:閃存 TSOP-40 1MX8 120NS RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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