參數(shù)資料
型號(hào): M29DW640F70N6F
廠商: STMICROELECTRONICS
元件分類(lèi): PROM
英文描述: 4M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
文件頁(yè)數(shù): 60/74頁(yè)
文件大?。?/td> 556K
代理商: M29DW640F70N6F
M29DW640F
Common Flash Interface (CFI)
Table 29.
Primary Algorithm-specific Extended Query table
Address
Data
Description
Value
x16
x8
40h
80h
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
41h
82h
0052h
"R"
42h
84h
0049h
"I"
43h
86h
0031h
Major version number, ASCII
"1"
44h
88h
0033h
Minor version number, ASCII
"3"
45h
8Ah
0000h
Address Sensitive Unlock (bits 1 to 0)
00 = required, 01= not required
Silicon Revision Number (bits 7 to 2)
Yes
46h
8Ch
0002h
Erase Suspend
00 = not supported, 01 = Read only, 02 = Read and Write
2
47h
8Eh
0001h
Block Protection
00 = not supported, x = number of sectors in per group
1
48h
90h
0001h
Temporary Block Unprotect
00 = not supported, 01 = supported
Yes
49h
92h
0005h
Block Protect /Unprotect
04 = M29W400B
05=
5
4Ah
94h
0077h
Simultaneous Operations,
x = number of blocks (excluding Bank A)
119
4Bh
96h
0000h
Burst Mode, 00 = not supported, 01 = supported
No
4Ch
98h
0002h
Page Mode, 00 = not supported, 01 = 4 page Word, 02 = 8 page
Word
Yes
4Dh
9Ah
00B5h
VPP Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
11.5V
4Eh
9Ch
00C5h
VPP Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12.5V
4Fh
9Eh
0001h
Top/Bottom Boot Block Flag
00h = uniform device
01h = 8 x8 KByte Blocks, Top and Bottom Boot with Write Protect
02h = Bottom boot device
03h = Top Boot Device
04h = Both Top and Bottom
T/B
50h
A0h
0001h
Program Suspend, 00 = not supported, 01 = supported
Yes
57h
AEh
0004h
Bank Organization, 00 = data at 4Ah is zero
X = number of banks
4
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