參數(shù)資料
型號: M29DW640F70N6F
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 4M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
文件頁數(shù): 1/74頁
文件大?。?/td> 556K
代理商: M29DW640F70N6F
August 2006
Rev 3
1
M29DW640F
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)
3V Supply Flash Memory
Feature summary
Supply voltage
–VCC = 2.7V to 3.6V for Program, Erase and
Read
–VPP =12V for Fast Program (optional)
Asynchronous Page Read mode
– Page Width 8 Words
– Page Access 25, 30ns
– Random Access 60, 70ns
Programming time
– 10s per Byte/Word typical
– 4 Words / 8 Bytes at-a-time Program
Memory blocks
– Quadruple Bank Memory Array:
8Mbit+24Mbit+24Mbit+8Mbit
– Parameter Blocks (at both Top and Bottom)
Dual operations
– While Program or Erase in a group of
banks (from 1 to 3), Read in any of the
other banks
Program/Erase Suspend and Resume
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
VPP/WP pin for Fast Program and Write Protect
Temporary Block Unprotection mode
Common Flash Interface
– 64 bit Security Code
Extended Memory Block
– Extra block used as security block or to
store additional information
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic Signature
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2202h + 2201
ECOPACK packages available
FBGA
TFBGA48 (ZE)
6 x 8 mm
TSOP48 (N)
12 x 20mm
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