參數(shù)資料
型號: M29DW640F70N6F
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 4M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
文件頁數(shù): 59/74頁
文件大?。?/td> 556K
代理商: M29DW640F70N6F
Common Flash Interface (CFI)
M29DW640F
Table 28.
Device Geometry Definition
Address
Data
Description
Value
x16
x8
27h
4Eh
0017h
Device Size = 2n in number of Bytes
8 MBytes
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0003h
0000h
Maximum number of Bytes in multi-Byte program or page = 2n
8
2Ch
58h
0003h
Number of Erase Block Regions(1). It specifies the number of
regions containing contiguous Erase Blocks of the same size.
3
2Dh
2Eh
5Ah
5Ch
0007h
0000h
Erase Block Region 1 Information
Number of Erase Blocks of identical size = 0007h+1
8
2Fh
30h
5Eh
60h
0020h
0000h
Erase Block Region 1 Information
Block size in Region 1 = 0020h * 256 Byte
8 KBytes
31h
32h
62h
64h
007Dh
0000h
Erase Block Region 2 Information
Number of Erase Blocks of identical size = 007Dh+1
126
33h
34h
66h
68h
0000h
0001h
Erase Block Region 2 Information
Block size in Region 2 = 0100h * 256 Byte
64 KBytes
35h
36h
6Ah
6Ch
0007h
0000h
Erase Block Region 3 information
Number of Erase Blocks of identical size = 0007h + 1
8
37h
38h
6Eh
70h
0020h
0000h
Erase Block Region 3 information
Block size in region 3 = 0020h * 256 Bytes
8 KBytes
1.
Erase Block Region 1 corresponds to addresses 000000h to 007FFFh; Erase block Region 2 corresponds to addresses
008000h to 3F7FFFh and Erase Block Region 3 corresponds to addresses 3F8000h to 3FFFFFh.
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