參數(shù)資料
型號： M29DW640F70N6F
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
文件頁數(shù)： 30/74頁
文件大?。?/td> 556K
代理商： M29DW640F70N6F
Dual operations and multiple bank architecture
M29DW640F
6
Dual operations and multiple bank architecture
The Multiple Bank Architecture of the
M29DW640F gives greater flexibility for software developers to split
the code and data spaces within the memory array. The Dual Operations feature simplifies the software
management of the device by allowing code to be executed from one bank while another bank is being
programmed or erased.
The Dual Operations feature means that while programming or erasing in one bank, read operations are
possible in another bank with zero latency.
Only one bank at a time is allowed to be in program or erase mode. However, certain commands can
cross bank boundaries, which means that during an operation only the banks that are not concerned with
the cross bank operation are available for dual operations. For example, if a Block Erase command is
issued to erase blocks in both Bank A and Bank B, then only Banks C or D are available for read
operations while the erase is being executed.
If a read operation is required in a bank, which is programming or erasing, the program or erase
operation can be suspended.
Also if the suspended operation was erase then a program command can be issued to another block, so
the device can have one block in Erase Suspend mode, one programming and other banks in read mode.
By using a combination of these features, read operations are possible at any moment in the device.
Table 10 and Table 11 show the dual operations possible in other banks and in the same bank. Note that
only the commonly used commands are represented in these tables.
Table 10.
Dual operations allowed in other banks
Status of bank(1)
Commands allowed in another bank(1)
Read
Array
Read
Status
Register(2)
Read
CFI
Query
Auto
Select
Program
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes(3)
Yes
Yes(3)
Yes(4)
Programming
Yes
No
–
No
Erasing
Yes
No
–
No
Program Suspended
Yes
No
Yes
No
–
Yes(5)
Erase Suspended
Yes
No
Yes
No
–
Yes(6)
1.
If several banks are involved in a program or erase operation, then only the banks that are not concerned with the operation
are available for dual operations.
2.
Read Status Register is not a command. The Status Register can be read during a block program or erase operation.
3.
Only after a program or erase operation in that bank.
4.
Only after a Program or Erase Suspend command in that bank.
5.
Only a Program Resume is allowed if the bank was previously in Program Suspend mode.
6.
Only an Erase Resume is allowed if the bank was previously in Erase Suspend mode.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW640F70N6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640F70ZE1 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640F70ZE1E 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640F70ZE1F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640F70ZE1T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
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