參數(shù)資料
型號(hào): M12L64164A-7BG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類(lèi): DRAM
英文描述: 1M x 16 Bit x 4 Banks Synchronous DRAM
中文描述: 4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
封裝: 8 X 8 MM, LEAD FREE, VBGA-54
文件頁(yè)數(shù): 41/45頁(yè)
文件大小: 831K
代理商: M12L64164A-7BG
ES MT
M12L64164A
Elite Semiconductor Memory Technology Inc.
Revision
:
3.0
Publication Date
:
Mar. 2007
41/45
Self Refresh Entry & Exit Cycle
*
Note :
TO ENTER SELF REFRESH MODE
1. CS , RAS & CAS with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.
3. The device remains in self refresh mode as long as CKE stays “Low”.
cf.) Once the device enters self refresh mode, minimum t
RAS
is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5. CS starts from high.
6. Minimum t
RFC
is required after CKE going high to complete self refresh exit.
7. Burst auto refresh is required before self refresh entry and after self refresh exit if the
system uses burst refresh.
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
C L O C K
C K E
C S
R A S
C A S
A D D R
W E
DQ
DQ M
A10/AP
A13,A1 2
S el f R ef r es h E n t r y
A u t o R ef r es h
: D o n ' t c a r e
*Not e 2
*No t e 1
t
S S
*Not e 3
*Not e 4
t
R F C
m i n
* No t e 6
S e l f R ef r e s h E xi t
Hi - Z
H i - Z
*No t e 5
* No t e 7
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L64164A-7BG2Y 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks
M12L64164A-7BIG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-7TA 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-7TG 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-7TG2Y 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks