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參數(shù)資料
| 型號(hào)： | M12L64164A-7BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| 封裝： | 8 X 8 MM, LEAD FREE, VBGA-54 |
| 文件頁數(shù)： | 4/45頁 |
| 文件大小： | 831K |
| 代理商： | M12L64164A-7BG |
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ES MT
M12L64164A
Elite Semiconductor Memory Technology Inc.
Revision
:
3.0
Publication Date
:
Mar. 2007
4/45
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted
，
TA = 0 to 70
C
°
VERSION
PARAMETER
SYMBOL
TEST CONDITION
-5
-6
-7
UNIT
NOTE
Operating Current
(One Bank Active)
I
CC1
Burst Length = 1, t
RC
≥
t
RC(min)
, I
OL
= 0 mA,
tcc = tcc(min)
100
85
85
mA
1,2
I
CC2P
CKE
≤
V
IL(max)
, tcc = tcc(min)
2
Precharge Standby Current
in power-down mode
I
CC2PS
CKE & CLK
≤
V
IL(max)
, tcc =
∞
1
mA
I
CC2N
CKE
≥
V
IH(min)
, CS
≤
V
IH(min)
, tcc = tcc(min)
Input signals are changed one time during 2CLK
20
Precharge Standby Current
in non power-down mode
I
CC2NS
CKE
≥
V
IH(min)
, CLK
≤
V
IL(max)
, tcc =
∞
input signals are stable
10
mA
I
CC3P
CKE
≤
V
IL(max)
, tcc = tcc(min)
10
Active Standby Current
in power-down mode
I
CC3PS
CKE & CLK
≤
V
IL(max)
, tcc =
∞
10
mA
I
CC3N
CKE
≥
V
IH(min)
, CS
≥
V
IH(min)
, tcc = tcc(min)
Input signals are changed one time during 2CLK
30
mA
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3NS
CKE
≥
V
IH(min)
, CLK
≤
V
IL(max)
, tcc =
∞
input signals are stable
25
mA
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0 mA, Page Burst, All Bank active
Burst Length = 4, CAS Latency = 3
t
RC
≥
t
RC(min)
, t
CC
= tcc(min)
180
150
140
mA
1,2
Refresh Current
I
CC5
180
150
140
mA
Self Refresh Current
I
CC6
CKE
≤
0.2V
1
mA
Note : 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
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| M12L64322A-5BG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12L64322A-5TG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12L64322A-6BG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12L64322A-6TG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12L64322A-7BG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12L64164A-7BG2Y | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks |
| M12L64164A-7BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-7TA | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-7TG | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-7TG2Y | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks |
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