參數(shù)資料
型號: IS42G32256-8PQ
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM
中文描述: 512K X 32 SYNCHRONOUS GRAPHICS RAM, 6.5 ns, PQFP100
封裝: 14 X 20 MM , PLASTIC, QFP-100
文件頁數(shù): 29/52頁
文件大?。?/td> 456K
代理商: IS42G32256-8PQ
IS42G32256
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION
SR037-0C
09/10/98
29
ISSI
Table 16. Absolute Maximun Ratings
(1)
Symbol
Parameters
Rating
Unit
V
CC
MAX
V
CCQ
V
IN
V
OUT
P
D
MAX
I
CS
T
OPR
T
STG
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
1
50
0 to +70
–55 to +150
V
V
V
V
W
mA
°
C
°
C
MAX
Table 17. DC Recommended Operating Conditions
(2)
(At T
A
= 0 to +70
°
C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
, V
CCQ
V
IH
V
IL
Supply Voltage
Input High Voltage
Input Low Voltage
3.0
2.0
–0.3
3.3
3.6
V
V
V
Vcc + 0.3
+0.8
Note:
1.
Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this specifi-
cation is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
All voltages are referenced to GND.
V
IH
(max) = 5.5V for pulse width
5 ns.
V
IL
(min) = 1.5V for pulse width
5 ns.
2.
3.
4.
Table 18. Capacitance Characteristics
(At T
A
= 0 to +25
°
C, V
CC
= V
CCQ
= 3.3V
±
0.3V, f = 1 MHz)
Symbol
Parameter
Typ.
Max.
Unit
C
IN
1
C
IN
2
CI/O
Input Capacitance: A0-A10
Input Capacitance: CLK, CKE,
CS
,
RAS
,
CAS
,
WE
, DSF, DQM0-3
Data Input/Output Capacitance: DQ0-DQ31
4
4
5
pF
pF
pF
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