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參數(shù)資料
| 型號： | IS42G32256-8PQ |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM |
| 中文描述： | 512K X 32 SYNCHRONOUS GRAPHICS RAM, 6.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM , PLASTIC, QFP-100 |
| 文件頁數(shù)： | 26/52頁 |
| 文件大小： | 456K |
| 代理商： | IS42G32256-8PQ |
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IS42G32256
26
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION
SR037-0C
09/10/98
ISSI
Write
H
L
L
L
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
X
H
H
H
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
X
H
H
H
H
L
L
X
H
H
H
L
L
L
X
H
H
H
L
L
L
X
H
H
H
L
L
L
L
H
H
H
L
X
H
H
L
L
H
L
X
H
H
L
L
H
L
X
H
H
L
H
H
L
X
H
H
L
H
H
L
X
H
L
L
H
H
L
L
H
L
H
X
X
H
L
H
L
X
X
X
H
L
H
L
X
X
X
H
L
X
H
L
X
X
H
L
X
H
L
X
X
X
L
H
L
H
L
H
X
L
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
NOP (Continue Burst to End
→
Row Active)
NOP (Continue Burst to End
→
Row Active)
Term burst
→
Row Active
ILLEGAL
Term burst, Begin Read; Latch CA; Determine AP
(3)
ILLEGAL
Term burst, Begin Write; Latch CA; Determine AP
(3)
Term burst, Begin Write; Latch CA; Determine AP
(3)
ILLEGAL
(2)
Term Burst: Precharge timing for Writes
(3)
ILLEGAL
ILLEGAL
NOP (Continue Burst to End
→
Precharge)
NOP (Continue Burst to End
→
Precharge)
ILLEGAL
ILLEGAL
(2)
ILLEGAL
(2)
ILLEGAL
ILLEGAL
(2)
NOP (Continue Burst to End
→
Precharge)
NOP (Continue Burst to End
→
Precharge)
ILLEGAL
ILLEGAL
(2)
ILLEGAL
(2)
ILLEGAL
ILLEGAL
(2)
NOP
→
Idle after t
RP
NOP
→
Idle after t
RP
ILLEGAL
ILLEGAL
(2)
ILLEGAL
(2)
NOP
→
Idle after t
RP(2)
ILLEGAL
(4)
NOP
→
Row Active after t
BWC
NOP
→
Row Active after t
BWC
ILLEGAL
ILLEGAL
(2)
ILLEGAL
(2)
Term Block Write: Precharge timing for Block Write
(2)
ILLEGAL
(2)
BA
X
BA
BA
BA
BA
X
X
X
X
X
BA
BA
BA
X
X
X
X
BA
BA
BA
X
X
X
X
BA
BA
BA
X
X
X
X
BA
BA
BA
X
CA, AP
X
CA, AP
CA, AP
RA
RA
X
X
X
X
X
CA, AP
CA, AP
RA, PA
X
X
X
X
CA, AP
CA, AP
RA, PA
X
X
X
X
CA, AP
RA
PA
X
X
X
X
CA, AP
RA
PA
X
Read
with
Auto
Precharge
Write
with
Auto
Precharge
Pre-
charging
Block
Write
Recovering L
L
L
L
L
Table 14. Function Truth Table (continued)
Current
State
BA
(A10)
CS RASCAS WE
DSF
ADDR
Action
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42G32256 | 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM |
| IS42S16100C1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100C1-5T | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100C1-5TL | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100C1-6T | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42K | 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC NPN NC |
| IS42KS | 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC NPN NC |
| IS42L | 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC NPN NC |
| IS42LS16800A | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS16800A-10B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
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