參數(shù)資料
型號: IS42G32256-8PQ
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM
中文描述: 512K X 32 SYNCHRONOUS GRAPHICS RAM, 6.5 ns, PQFP100
封裝: 14 X 20 MM , PLASTIC, QFP-100
文件頁數(shù): 13/52頁
文件大?。?/td> 456K
代理商: IS42G32256-8PQ
IS42G32256
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION
SR037-0C
09/10/98
13
ISSI
Table 11. Summary of SGRAM Basic Features and Benefits
Features
Interface
256K x 32 x 2 SGRAM
Synchronous
Benefits
Better interaction between memory and system without wait-
state of asynchronous DRAM.
High speed vertical and horizontal drawing.
High operation frequency allows performance gain for
SCROLL, FILL, and BitBLT.
Pseudo-infinite row length by on-chip interleaving operation.
Hidden row activation precharge.
High-speed vertical and horizontal drawing.
High speed vertical and horizontal drawing.
Programmable burst of 1, 2, 4, 8 and full page transfer per
column address.
Programmable burst of 1, 2, 4, 8 and full page transfer per
column address.
Switch to burst length of 1 at write without MRS.
Compatible with Intel and Motorola CPU based system.
Programmable CAS latency.
High speed FILL, CLEAR, Text with color registers.
Maximum 32-byte data transfer (e.g., for 8bpp: 32 pixels) with
plane and byte masking functions.
A and B bank share.
Write-per-bit capability (bit plane masking). A and B bank
share.
Byte masking (pixel masking for 8bpp system) for data-out/in.
Each bit of the mask register directly controls a corresponding
bit plane.
Byte masking (pixel masking for 8bpp system) for color DQi.
Bank
2 each
Page Depth /1 Row
Total Page Depth
Burst Length (Read)
256 bit
2048 bytes
1, 2, 4, 8 Full Page
Burst Length (Write)
1 2 4 8 Full Page
BRSW
Burst Type
CAS Latency
Block Write
Sequential & Interleave
2, 3
8-Column
Color Register
Mask Register
1 each
1 each
DQM0-3
Write per bit
Mask function
Pixel Mask at Block Write
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PDF描述
IS42G32256 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM
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