參數(shù)資料
型號(hào)： HYB25D128800ATL-8
廠商： INFINEON TECHNOLOGIES AG
英文描述： 128 Mbit Double Data Rate SDRAM
中文描述： 128兆雙倍數(shù)據(jù)速率SDRAM
文件頁(yè)數(shù)： 61/79頁(yè)
文件大小： 2596K
代理商： HYB25D128800ATL-8
HYB25D128[400/800/160]A-[6/7/8]
128Mbit Double Data Rate SDRAM
Electrical Characteristics
Data Sheet
61
Rev. 1.06, 2004-01
09192003-LFQ1-R60G
Table 19
Parameter
AC Timing for DDR266(A) - Applicable Specs in Clock Cycles
Symbol DDR266(A) @CL = 2 Units Notes
1)
Min.
Max.
t
MRD
2
—
t
WPRE
0.25
—
t
RAS
6
16000
t
RC
9
—
8
—
10
—
t
RCD
3
—
2
—
t
RP
3
—
2
—
t
RRD
2
—
t
WR
2
—
t
DAL
5
—
t
WTR
1
—
t
XSNR
17
—
t
XSRD
200
—
1) 0
°
C
≤
T
A
≤
70
°
C;
V
DDQ
= 2.5 V
±
0.2 V,
V
DD
= +2.5 V
±
0.2 V
2) Input slew rate = 1 V/ns.
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference
level for signals other than CK/CK, is
V
REF
.
4) Inputs are not recognized as valid until
V
REF
stabilizes.
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (Note 3) is
V
TT
.
6)
t
HZ
and
t
LZ
transitions occur in the same access time windows as valid data transitions. These parameters are not referred
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
Mode register set command cycle time
Write preamble
Active to Precharge command
Active to Active/Auto-refresh command period
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
2)3)4)5)6)
2) to 6)
2) to 6)
DDR266A
2) to 6)
DDR266
2) to 6)
2) to 6)
Auto-refresh to Active/Auto-refresh command period
t
RFC
Active to Read or Write delay
DDR266A
2) to 6)
DDR266
2) to 6)
DDR266A
2) to 6)
DDR266
2) to 6)
2) to 6)
Precharge command period
Active bank A to Active bank B command
Write recovery time
Auto precharge write recovery + precharge time
Internal write to read command delay
Exit self-refresh to non-read command
Exit self-refresh to read command
2) to 6)
2) to 6)
2) to 6)
2) to 6)
2) to 6)
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HYB25D128800CE-6 功能描述:IC DDR SDRAM 128MBIT 66TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁(yè)面:1449 (CN2011-ZH PDF)
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