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參數(shù)資料
| 型號： | HYB25D128800ATL-8 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 128 Mbit Double Data Rate SDRAM |
| 中文描述： | 128兆雙倍數(shù)據(jù)速率SDRAM |
| 文件頁數(shù)： | 19/79頁 |
| 文件大小： | 2596K |
| 代理商： | HYB25D128800ATL-8 |
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HYB25D128[400/800/160]A-[6/7/8]
128Mbit Double Data Rate SDRAM
Functional Description
Data Sheet
19
Rev. 1.06, 2004-01
09192003-LFQ1-R60G
command is automatically performed upon completion of the Read or Write burst. Auto Precharge is nonpersistent
in that it is either enabled or disabled for each individual Read or Write command. Auto Precharge ensures that
the precharge is initiated at the earliest valid stage within a burst. The user must not issue another command to
the same bank until the precharge (
t
RP
) is completed. This is determined as if an explicit Precharge command was
issued at the earliest possible time, as described for each burst type in the Operation section of this data sheet.
Burst Terminate
The Burst Terminate command is used to truncate read bursts (with Auto Precharge disabled). The most re-cently
registered Read command prior to the Burst Terminate command is truncated, as shown in the Operation section
of this data sheet.
Auto Refresh
Auto Refresh is used during normal operation of the DDR SDRAM and is analogous to CAS Before RAS (CBR)
Refresh in previous DRAM types. This command is nonpersistent, so it must be issued each time a refresh is
required.
The refresh addressing is generated by the internal refresh controller. This makes the address bits “Don’t Care”
during an Auto Refresh command. The 128Mb DDR SDRAM requires Auto Refresh cycles at an average periodic
interval of 15.6
μ
s (maximum).
To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh
interval is provided. A maximum of eight Auto Refresh commands can be posted in the system, meaning that the
maximum absolute interval between any Auto Refresh command and the next Auto Refresh command is 9
×
15.6
μ
s. This maximum absolute interval is short enough to allow for DLL updates internal to the DDR SDRAM to be
restricted to Auto Refresh cycles, without allowing too much drift in
t
AC
between updates.
Self Refresh
The Self Refresh command can be used to retain data in the DDR SDRAM, even if the rest of the system is
powered down. When in the self refresh mode, the DDR SDRAM retains data without external clocking. The Self
Refresh command is initiated as an Auto Refresh command coincident with CKE transitioning low. The DLL is
automatically disabled upon entering Self Refresh, and is automatically enabled upon exiting Self Refresh (200
clock cycles must then occur before a Read command can be issued). Input signals except CKE (low) are “Don’t
Care” during Self Refresh operation.
The procedure for exiting self refresh requires a sequence of commands. CK (and CK) must be stable prior to CKE
returning high. Once CKE is high, the SDRAM must have NOP commands issued for
t
XSNR
because time is
required for the completion of any internal refresh in progress. A simple algorithm for meeting both refresh and
DLL requirements is to apply NOPs for 200 clock cycles before applying any other command.
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| HYB25D128800CE-6 | 功能描述:IC DDR SDRAM 128MBIT 66TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-PDIP 包裝:管件 產品目錄頁面:1449 (CN2011-ZH PDF) |
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