參數(shù)資料
型號: HYB25D128800ATL-8
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128 Mbit Double Data Rate SDRAM
中文描述: 128兆雙倍數(shù)據(jù)速率SDRAM
文件頁數(shù): 36/79頁
文件大?。?/td> 2596K
代理商: HYB25D128800ATL-8
HYB25D128[400/800/160]A-[6/7/8]
128Mbit Double Data Rate SDRAM
Functional Description
Data Sheet
36
Rev. 1.06, 2004-01
09192003-LFQ1-R60G
Figure 21
Write to Read: Non-Interrupting (CAS Latency = 2; Burst Length = 4)
CL = 2
T1
T2
T3
T4
T5
T6
t
WTR
NOP
NOP
NOP
Read
Write
DI a-b
NOP
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
t
WTR
is referenced from the first positive CK edge after the last data in pair.
A10 is Low with the Write command (Auto Precharge is disabled).
The Read and Write commands may be to any bank.
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
Maximum DQSS
BAa, COL b
BAa, COL n
T1
T2
T3
T4
T5
T6
t
WTR
NOP
NOP
NOP
Read
Write
NOP
CK
CK
Command
Address
Minimum DQSS
BAa, COL b
BAa, COL n
t
DQSS
(max)
DI a-b
DQS
DQ
DM
t
DQSS
(min)
CL = 2
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