參數(shù)資料
型號(hào): HYB25D128400AT
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128 Mbit Double Data Rate SDRAM
中文描述: 128兆雙倍數(shù)據(jù)速率SDRAM
文件頁數(shù): 46/79頁
文件大小: 2596K
代理商: HYB25D128400AT
HYB25D128[400/800/160]A-[6/7/8]
128Mbit Double Data Rate SDRAM
Functional Description
Data Sheet
46
Rev. 1.06, 2004-01
09192003-LFQ1-R60G
Note:
1. CKEn is the logic state of CKE at clock edge n: CKE n-1 was the state of CKE at the previous clock edge.
2. Current state is the state of the DDR SDRAM immediately prior to clock edge n.
3.
COMMAND
n
is the command registered at clock edge
n
, and ACTION
n
is a result of COMMAND
n
.
4. All states and sequences not shown are illegal or reserved
Table 7
Current State CKE n-1
Truth Table 2: Clock Enable (CKE)
CKEn
Previous
Cycle
Cycle
L
L
L
H
L
L
L
H
All Banks Idle
H
All Banks Idle
H
Bank(s) Active H
H
Command n
Action n
Notes
Current
Self Refresh
Self Refresh
Power Down
Power Down
X
Deselect or NOP
X
Deselect or NOP
Deselect or NOP
AUTO REFRESH
Deselect or NOP
See
“Truth Table 3:
Current State Bank n -
Command to Bank n (same
bank)” on Page 47
Maintain Self-Refresh
Exit Self-Refresh
Maintain Power-Down
Exit Power-Down
Precharge Power-Down Entry –
Self Refresh Entry
Active Power-Down Entry
1)
L
L
L
H
1) Deselect or NOP commands should be issued on any clock edges occurring during the Self Refresh Exit (
t
XSNR
) period. A
minimum of 200 clock cycles are needed before applying a read command to allow the DLL to lock to the input clock.
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