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參數(shù)資料
| 型號： | HB52E88EM |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM) |
| 中文描述： | 64 MB的無緩沖SDRAM的內(nèi)存（64MB的未緩沖同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 52/64頁 |
| 文件大?。?/td> | 2741K |
| 代理商： | HB52E88EM |
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HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
52
Reading
Writing
Refresh
Auto-refresh:
All the banks must be precharged before executing an auto-refresh command. Since the auto-
refresh command updates the internal counter every time it is executed and determines the banks and the
ROW addresses to be refreshed, external address specification is not required. The refresh cycle is 4096 cy-
cles/64 ms. (4096 cycles are required to refresh all the ROW addresses.) The output buffer becomes High-
Z after auto-refresh start. In addition, since a precharge has been completed by an internal operation after the
auto-refresh, an additional precharge operation by the precharge command is not required.
Self-refresh:
After executing a self-refresh command, the self-refresh operation continues while CKE is held
Low. During self-refresh operation, all ROW addresses are refreshed by the internal refresh timer. A self-
refresh is terminated by a self-refresh exit command. Before and after self-refresh mode, execute auto-refresh
to all refresh addresses in or within 64 ms period on the condition (1) and (2) below.
(1) Enter self-refresh mode within 15.6
μ
s after either burst refresh or distributed refresh at equal interval to
all refresh addresses are completed.
(2) Start burst refresh or distributed refresh at equal interval to all refresh addresses within 15.6
μ
s after ex-
iting from self-refresh mode.
CK
Dout
out 0
out 1
l = 2 Latency
out 3
DQMB
High-Z
CK
Din
in 0
in 1
l = 0 Latency
in 3
DQMB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52E89EM | 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM) |
| HB52E169E12 | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| HB52E648EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649E12 | THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E88EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52E89E1P-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52E89EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52F168GB-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52F168GB-75BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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