參數(shù)資料
型號: HB52E88EM
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無緩沖SDRAM的內(nèi)存(64MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 49/64頁
文件大?。?/td> 2741K
代理商: HB52E88EM
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
49
CE Latency = 3, Burst Length = 1, 2, 4, 8, full page burst
Write command to Precharge command interval (same bank):
When the precharge command is executed
for the same bank as the write command that preceded it, the minimum interval between the two commands
is 1 clock.
However, if the burst write operation is unfinished, the input data must be masked by means of
DQMB for assurance of the clock defined by t
DPL
.
WRITE to PRECHARGE Command Interval (same bank):
Burst Length = 4 (To stop write operation)
CK
Command
Dout
READ
PRE/PALL
out A0
High-Z
l
HZP
= 3
CK
Command
Din
WRIT
PRE/PALL
t
DPL
DQMB
CK
in A0
in A1
Command
Din
WRIT
PRE/PALL
DQMB
t
DPL
相關(guān)PDF資料
PDF描述
HB52E89EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E169E12 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
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