參數(shù)資料
型號(hào): HB52E88EM
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無(wú)緩沖SDRAM的內(nèi)存(64MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 44/64頁(yè)
文件大?。?/td> 2741K
代理商: HB52E88EM
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
44
READ to WRITE Command Interval (1)
READ to WRITE Command Interval (2)
2. Same bank, different ROW address:
When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank:
When the bank changes, the write command can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. However, DQMB must be set High so
that the output buffer becomes High-Z before data input.
Write command to Read command interval:
1. Same bank, same ROW address:
When the read command is executed at the same ROW address of the
same bank as the preceding write command, the read command can be performed after an interval of no less
than 1 clock. However, in the case of a burst write, data will continue to be written until one cycle before the
read command is executed.
CK
Command
Dout
in B2
in B3
READ
WRIT
in B0
in B1
High-Z
Din
CL=2
CL=3
DQMB
Burst Length = 4
Burst write
CK
Command
Dout
READ
WRIT
Din
CL=2
CL=3
DQMB
High-Z
2 clock
High-Z
相關(guān)PDF資料
PDF描述
HB52E89EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E169E12 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
HB52E649E12 THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
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