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參數(shù)資料
| 型號： | HB52E88EM |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM) |
| 中文描述： | 64 MB的無緩沖SDRAM的內(nèi)存（64MB的未緩沖同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 27/64頁 |
| 文件大?。?/td> | 2741K |
| 代理商： | HB52E88EM |
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HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
27
Note: H: V
IH
. L: V
IL
.
×
: V
IH
or V
IL
. V: Valid address input
Ignore command [DESL]:
When this command is set (S is High), the SDRAM module ignore command
input at the clock. However, the internal status is held.
No operation [NOP]:
This command is not an execution command. However, the internal operations con-
tinue.
Burst stop in full-page [BST]:
This command stops a full-page burst operation (burst length = full-page)
and is illegal otherwise. When data input/output is completed for a full page of data, it automatically returns
to the start address, and input/output is performed repeatedly.
Column address strobe and read command [READ]:
This command starts a read operation. In addition,
the start address of burst read is determined by the column address and the bank select address (BA). After
the read operation, the output buffer becomes High-Z.
Read with auto-precharge [READ A]:
This command automatically performs a precharge operation after
a burst read with a burst length of 1, 2, 4 or 8. When the burst length is full-page, this command is illegal.
Column address strobe and write command [WRIT]:
This command starts a write operation. When the
burst write mode is selected, the column address and the bank select address (BA) become the burst write start
address. When the single write mode is selected, data is only written to the location specified by the column
address and the bank select address (BA).
Write with auto-precharge [WRIT A]:
This command automatically performs a precharge operation after
a burst write with a length of 1, 2, 4 or 8, or after a single write operation. When the burst length is full-page,
this command is illegal.
Row address strobe and bank activate [ACTV]:
This command activates the bank that is selected by bank
select address (BA) and determines the row address (AX0 to AX11). When A12 and A13 are Low, bank 0
is activated. When A12 is High and A13 is Low, bank 1 is activated. When A12 is Low and A13 is High,
bank 2 is activated. When A12 and A13 are High, bank 3 is activated.
Precharge selected bank [PRE]:
This command starts precharge operation for the bank selected by A12/
A13. If A12 and A13 are Low, bank 0 is selected. If A12 is High and A13 is Low, bank 1 is selected. If A12
is Low and A13 is High, bank 2 is selected. If A12 and A13 are High, bank 3 is selected.
Command
Ignore command
No operation
Burst stop in full page
Column address and read command READ
Read with auto-precharge
Column address and write command WRIT
Write with auto-precharge
Row address strobe and bank active ACTV
Precharge select bank
Precharge all bank
Refresh
Mode register set
Symbol
DESL
NOP
BST
CKE
n - 1 n
H
H
H
H
H
H
H
H
H
H
A12/
A13
×
×
×
V
V
V
V
V
V
×
×
V
A10
×
×
×
L
H
L
H
V
L
H
×
V
A0
to A11
×
×
×
V
V
V
V
V
×
×
×
V
S
H
L
L
L
L
L
L
L
L
L
L
L
RE
×
H
H
H
H
H
H
L
L
L
L
L
CE
×
H
H
L
L
L
L
H
H
H
L
L
W
×
H
L
H
H
L
L
H
L
L
H
L
×
×
×
×
×
×
×
×
×
×
V
×
READ A
WRIT A
PRE
PALL
REF/SELF H
MRS
H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52E89EM | 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM) |
| HB52E169E12 | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| HB52E648EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649EN | 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM) |
| HB52E649E12 | THERMISTOR, NTC; Series:B575; Thermistor type:NTC; Resistance:10kR; Tolerance, resistance:+/-1%; Beta value:3450; Temperature, lower limit, beta value:0(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E88EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52E89E1P-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52E89EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52F168GB-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52F168GB-75BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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