參數(shù)資料
型號: DEMO9RS08KA2
廠商: Freescale Semiconductor
文件頁數(shù): 62/136頁
文件大?。?/td> 0K
描述: DEMO BOARD FOR 9RS08KA2
產(chǎn)品培訓模塊: Mechatronics
USBSpyder08 Discovery Kit
RS08KA2 Low-End Microcontroller Series
MC9RS08KA8 Microcontroller
標準包裝: 1
系列: RS08
類型: MCU
適用于相關(guān)產(chǎn)品: MC9RS08KA2
所含物品: 板,線纜,CD,文檔,樣品 IC
產(chǎn)品目錄頁面: 730 (CN2011-ZH PDF)
相關(guān)產(chǎn)品: MC9RS08KA2CSCRTR-ND - IC MCU 8BIT 2K FLASH 8-SOIC
PC9RS08KA2PAE-ND - MCU 8BIT 2KB FLASH RS08 8-DIP
PC9RS08KA2FPE-ND - MCU 8BIT 2KB FLASH RS08 6-VDFN
PC9RS08KA2DWE-ND - MCU 8BIT 2KB FLASH RS08 8-SOIC
MC9RS08KA2CPC-ND - IC MCU 8-BIT 2K FLASH 8-PDIP
MC9RS08KA2CDB-ND - IC MCU 8-BIT 2K FLASH 6-DFN
MC9RS08KA2CSC-ND - IC MCU 8-BIT 2K FLASH 8-SOIC
Chapter 4 Memory
MC9RS08KA2 Series Data Sheet, Rev. 4
Freescale Semiconductor
31
3. Write any data to any Flash location, via the high page accessing window $00C0–$00FF. (Prior to
the data writing operation, the PAGESEL register must be configured correctly to map the high
page accessing window to the any Flash locations).
4. Wait for a time, tnvs.
5. Set the HVEN bit.
6. Wait for a time tme.
7. Clear the MASS bit.
8. Wait for a time, tnvh1.
9. Clear the HVEN bit.
10. After time, trcv, the memory can be accessed in read mode again.
11. Remove external VPP.
NOTE
Flash memory cannot be programmed or erased by software code executed
from Flash locations. To program or erase Flash, commands must be
executed from RAM or BDC commands. User code should not enter wait or
stop during an erase or program sequence.
These operations must be performed in the order shown, but other unrelated
operations may occur between the steps.
4.6.4
Security
The MC9RS08KA2 Series includes circuitry to help prevent unauthorized access to the contents of Flash
memory. When security is engaged, Flash is considered a secure resource. The RAM, direct-page registers,
and background debug controller are considered unsecured resources. Attempts to access a secure memory
location through the background debug interface, or whenever BKGDPE is set, are blocked (reads return
all 0s).
Security is engaged or disengaged based on the state of a nonvolatile register bit (SECD) in the FOPT
register. During reset, the contents of the nonvolatile location NVOPT are copied from Flash into the
working FOPT register in high-page register space. A user engages security by programming the NVOPT
location, which can be done at the same time the Flash memory is programmed. Notice the erased state
(SECD = 1) makes the MCU unsecure. When SECD in NVOPT is programmed (SECD = 0), next time
the device is reset via POR, internal reset, or external reset, security is engaged. In order to disengage
security, mass erase must be performed via BDM commands and followed by any reset.
The separate background debug controller can still be used for registers and RAM access. Flash mass erase
is possible by writing to the Flash control register that follows the Flash mass erase procedure listed in
Security can always be disengaged through the background debug interface by following these steps:
1. Mass erase Flash via background BDM commands or RAM loaded program.
2. Perform reset and the device will boot up with security disengaged.
相關(guān)PDF資料
PDF描述
VE-J1B-EZ CONVERTER MOD DC/DC 95V 25W
EBC28DREH CONN EDGECARD 56POS .100 EYELET
ECC35DCMN CONN EDGECARD 70POS .100 WW
EBC35DCSN CONN EDGECARD 70POS DIP .100 SLD
MRJ0280DD-A C/A MRJ21/MRJ21 GBE STRT CMR 28M
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DEMO9RS08KB12 功能描述:開發(fā)板和工具包 - S08 / S12 KB12 DEMO Board RoHS:否 產(chǎn)品:Development Kits 工具用于評估:MC9S12G128 核心:S12 接口類型:CAN, LIN, RS-232, USB 工作電源電壓:5 V 制造商:Freescale Semiconductor
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