參數(shù)資料
型號： DEMO9RS08KA2
廠商： Freescale Semiconductor
文件頁數(shù)： 61/136頁
文件大?。?/td> 0K
描述： DEMO BOARD FOR 9RS08KA2
產品培訓模塊： Mechatronics
USBSpyder08 Discovery Kit
RS08KA2 Low-End Microcontroller Series
MC9RS08KA8 Microcontroller
標準包裝： 1
系列： RS08
類型： MCU
適用于相關產品： MC9RS08KA2
所含物品： 板，線纜，CD，文檔，樣品 IC
產品目錄頁面： 730 (CN2011-ZH PDF)
相關產品： MC9RS08KA2CSCRTR-ND - IC MCU 8BIT 2K FLASH 8-SOIC
PC9RS08KA2PAE-ND - MCU 8BIT 2KB FLASH RS08 8-DIP
PC9RS08KA2FPE-ND - MCU 8BIT 2KB FLASH RS08 6-VDFN
PC9RS08KA2DWE-ND - MCU 8BIT 2KB FLASH RS08 8-SOIC
MC9RS08KA2CPC-ND - IC MCU 8-BIT 2K FLASH 8-PDIP
MC9RS08KA2CDB-ND - IC MCU 8-BIT 2K FLASH 6-DFN
MC9RS08KA2CSC-ND - IC MCU 8-BIT 2K FLASH 8-SOIC
Chapter 4 Memory
MC9RS08KA2 Series Data Sheet, Rev. 4
30
Freescale Semiconductor
Up to 1000 program/erase cycles at typical voltage and temperature
Security feature for Flash
4.6.2
Flash Programming Procedure
Programming of Flash memory is done on a row basis. A row consists of 64 consecutive bytes starting
from addresses $3X00, $3X40, $3X80, or $3XC0. Use the following procedure to program a row of Flash
memory:
1. Apply external VPP.
2. Set the PGM bit. This configures the memory for program operation and enables the latching of
address and data for programming.
3. Write any data to any Flash location, via the high page accessing window $00C0–$00FF, within
the address range of the row to be programmed. (Prior to the data writing operation, the PAGESEL
register must be configured correctly to map the high page accessing window to the corresponding
Flash row).
4. Wait for a time, tnvs.
5. Set the HVEN bit.
6. Wait for a time, tpgs.
7. Write data to the Flash location to be programmed.
8. Wait for a time, tprog.
9. Repeat steps 7 and 8 until all bytes within the row are programmed.
10. Clear the PGM bit.
11. Wait for a time, tnvh.
12. Clear the HVEN bit.
13. After time, trcv, the memory can be accessed in read mode again.
14. Remove external VPP.
This program sequence is repeated throughout the memory until all data is programmed.
NOTE
Flash memory cannot be programmed or erased by software code executed
from Flash locations. To program or erase Flash, commands must be
executed from RAM or BDC commands. User code should not enter wait or
stop during erase or program sequence.
These operations must be performed in the order shown; other unrelated
operations may occur between the steps.
4.6.3
Flash Mass Erase Operation
Use the following procedure to mass erase the entire Flash memory:
1. Apply external VPP.
2. Set the MASS bit in the Flash control register.
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相關代理商/技術參數(shù)
參數(shù)描述
DEMO9RS08KA8 功能描述:開發(fā)板和工具包 - S08 / S12 DEMO BOARD FOR KA8 PRODUCT RoHS:否 產品:Development Kits 工具用于評估:MC9S12G128 核心:S12 接口類型:CAN, LIN, RS-232, USB 工作電源電壓:5 V 制造商:Freescale Semiconductor
DEMO9RS08KB12 功能描述:開發(fā)板和工具包 - S08 / S12 KB12 DEMO Board RoHS:否 產品:Development Kits 工具用于評估:MC9S12G128 核心:S12 接口類型:CAN, LIN, RS-232, USB 工作電源電壓:5 V 制造商:Freescale Semiconductor
DEMO9RS08KB12 制造商:Freescale Semiconductor 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE
DEMO9RS08LA8 功能描述:開發(fā)板和工具包 - S08 / S12 DEMO BOARD FOR LA8 RoHS:否 產品:Development Kits 工具用于評估:MC9S12G128 核心:S12 接口類型:CAN, LIN, RS-232, USB 工作電源電壓:5 V 制造商:Freescale Semiconductor
DEMO9RS08LE4 功能描述:開發(fā)板和工具包 - S08 / S12 LE4 Family Demo Board RoHS:否 產品:Development Kits 工具用于評估:MC9S12G128 核心:S12 接口類型:CAN, LIN, RS-232, USB 工作電源電壓:5 V 制造商:Freescale Semiconductor
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