參數(shù)資料
型號(hào): DEMO9RS08KA2
廠商: Freescale Semiconductor
文件頁數(shù): 25/136頁
文件大?。?/td> 0K
描述: DEMO BOARD FOR 9RS08KA2
產(chǎn)品培訓(xùn)模塊: Mechatronics
USBSpyder08 Discovery Kit
RS08KA2 Low-End Microcontroller Series
MC9RS08KA8 Microcontroller
標(biāo)準(zhǔn)包裝: 1
系列: RS08
類型: MCU
適用于相關(guān)產(chǎn)品: MC9RS08KA2
所含物品: 板,線纜,CD,文檔,樣品 IC
產(chǎn)品目錄頁面: 730 (CN2011-ZH PDF)
相關(guān)產(chǎn)品: MC9RS08KA2CSCRTR-ND - IC MCU 8BIT 2K FLASH 8-SOIC
PC9RS08KA2PAE-ND - MCU 8BIT 2KB FLASH RS08 8-DIP
PC9RS08KA2FPE-ND - MCU 8BIT 2KB FLASH RS08 6-VDFN
PC9RS08KA2DWE-ND - MCU 8BIT 2KB FLASH RS08 8-SOIC
MC9RS08KA2CPC-ND - IC MCU 8-BIT 2K FLASH 8-PDIP
MC9RS08KA2CDB-ND - IC MCU 8-BIT 2K FLASH 6-DFN
MC9RS08KA2CSC-ND - IC MCU 8-BIT 2K FLASH 8-SOIC
Appendix A Electrical Characteristics
MC9RS08KA2 Series Data Sheet, Rev. 4
120
Freescale Semiconductor
Table A-9. FLASH Characteristics
Characteristic
Symbol
Min
Typical1
1 Typicals are measured at 25
°C.
Max
Unit
Supply voltage for program/erase
VDD
2.7
5.5
V
Program/Erase voltage
VPP
11.8
12
12.2
V
VPP current
Program
Mass erase
IVPP_prog
IVPP_erase
200
100
μA
Supply voltage for read operation
0 < fBus < 10 MHz
VRead
1.8
5.5
V
Byte program time
tprog
20
40
μs
Mass erase time
tme
500
ms
Cumulative program HV time2
2 t
hv is the cumulative high voltage programming time to the same row before next erase. Same address can not
be programmed more than twice before next erase.
thv
——
8
ms
Total cumulative HV time
(total of tme & thv applied to device)
thv_total
2
hours
HVEN to program setup time
tpgs
10
μs
PGM/MASS to HVEN setup time
tnvs
5—
μs
HVEN hold time for PGM
tnvh
5—
μs
HVEN hold time for MASS
tnvh1
100
μs
VPP to PGM/MASS setup time
tvps
20
ns
HVEN to VPP hold time
tvph
20
ns
VPP rise time
3
3 Fast V
PP rise time may potentially trigger the ESD protection structure, which may result in over current flowing
into the pad and cause permanent damage to the pad. External filtering for the VPP power source is
recommended. An example VPP filter is shown in Figure A-3.
tvrs
200
ns
Recovery time
trcv
1—
μs
Program/erase endurance
TL to TH = –40°C to + 85°C
1000
cycles
Data retention
tD_ret
15
100
years
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