PD
參數(shù)資料
型號： DEMO9RS08KA2
廠商： Freescale Semiconductor
文件頁數(shù)： 15/136頁
文件大?。?/td> 0K
描述： DEMO BOARD FOR 9RS08KA2
產(chǎn)品培訓(xùn)模塊： Mechatronics
USBSpyder08 Discovery Kit
RS08KA2 Low-End Microcontroller Series
MC9RS08KA8 Microcontroller
標(biāo)準(zhǔn)包裝： 1
系列： RS08
類型： MCU
適用于相關(guān)產(chǎn)品： MC9RS08KA2
所含物品： 板，線纜，CD，文檔，樣品 IC
產(chǎn)品目錄頁面： 730 (CN2011-ZH PDF)
相關(guān)產(chǎn)品： MC9RS08KA2CSCRTR-ND - IC MCU 8BIT 2K FLASH 8-SOIC
PC9RS08KA2PAE-ND - MCU 8BIT 2KB FLASH RS08 8-DIP
PC9RS08KA2FPE-ND - MCU 8BIT 2KB FLASH RS08 6-VDFN
PC9RS08KA2DWE-ND - MCU 8BIT 2KB FLASH RS08 8-SOIC
MC9RS08KA2CPC-ND - IC MCU 8-BIT 2K FLASH 8-PDIP
MC9RS08KA2CDB-ND - IC MCU 8-BIT 2K FLASH 6-DFN
MC9RS08KA2CSC-ND - IC MCU 8-BIT 2K FLASH 8-SOIC
Appendix A Electrical Characteristics
MC9RS08KA2 Series Data Sheet, Rev. 4
Freescale Semiconductor
111
PD = K ÷ (TJ + 273°C)
Eqn. A-2
Solving Equation A-1 and Equation A-2 for K gives:
K = PD × (TA + 273°C) + θJA × (PD)
2
Eqn. A-3
where K is a constant pertaining to the particular part. K can be determined from Equation A-3 by
measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be
obtained by solving equations 1 and 2 iteratively for any value of TA.
A.4
Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete dc parametric and functional testing is performed per the applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the
device specification.
A.5
DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table A-3. ESD Protection Characteristics
Parameter
Symbol
Value
Unit
ESD Target for Machine Model (MM)
MM circuit description
VTHMM
200
V
ESD Target for Human Body Model (HBM)
HBM circuit description
VTHHBM
2000
V
Table A-4. DC Characteristics
(Temperature Range = –40 to 85
°C Ambient)
Parameter
Symbol
Min
Typical
Max
Unit
Supply voltage (run, wait and stop modes.)
0 < fBus <10MHz
VDD
1.8
—
5.5
V
Minimum RAM retention supply voltage applied to VDD
VRAM
0.8 1
——
V
Low-voltage Detection threshold
(VDD falling)
(VDD rising)
VLVD
1.80
1.88
1.86
1.94
1.95
2.03
V
Power on RESET (POR) voltage
VPOR
0.9
1.4
1.7
V
Input high voltage (VDD > 2.3V) (all digital inputs)
VIH
0.70
× V
DD
——
V
Input high voltage (1.8 V
≤ V
DD ≤ 2.3 V) (all digital inputs)
VIH
0.85
× V
DD
——
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DEMO9RS08KA8 功能描述:開發(fā)板和工具包 - S08 / S12 DEMO BOARD FOR KA8 PRODUCT RoHS:否 產(chǎn)品:Development Kits 工具用于評估:MC9S12G128 核心:S12 接口類型:CAN, LIN, RS-232, USB 工作電源電壓:5 V 制造商:Freescale Semiconductor
DEMO9RS08KB12 功能描述:開發(fā)板和工具包 - S08 / S12 KB12 DEMO Board RoHS:否 產(chǎn)品:Development Kits 工具用于評估:MC9S12G128 核心:S12 接口類型:CAN, LIN, RS-232, USB 工作電源電壓:5 V 制造商:Freescale Semiconductor
DEMO9RS08KB12 制造商:Freescale Semiconductor 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE
DEMO9RS08LA8 功能描述:開發(fā)板和工具包 - S08 / S12 DEMO BOARD FOR LA8 RoHS:否 產(chǎn)品:Development Kits 工具用于評估:MC9S12G128 核心:S12 接口類型:CAN, LIN, RS-232, USB 工作電源電壓:5 V 制造商:Freescale Semiconductor
DEMO9RS08LE4 功能描述:開發(fā)板和工具包 - S08 / S12 LE4 Family Demo Board RoHS:否 產(chǎn)品:Development Kits 工具用于評估:MC9S12G128 核心:S12 接口類型:CAN, LIN, RS-232, USB 工作電源電壓:5 V 制造商:Freescale Semiconductor
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