| 型號(hào) | 廠商 | 描述 |
| k4e660412e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e660412e-ji45 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e660412e-ji50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e660412e-ji60 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e660412e-jp45 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e660412e-jp50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e660412e-jp60 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e660412e-tp50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e660412e-tp60 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e640412e-ji60 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e640412e-jp45 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e640412e-jp50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e640412e-jp60 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e640412e-tp50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 33uF; Voltage: 100V; Case Size: 10x25 mm; Packaging: Bulk |
| k4e640412e-tp60 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e660412e-ti60 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e640412e-ti60 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e660412e-ti50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4e640412e-ti50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| k4f151612d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| k4f151611 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| k4f151611d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 100uF; Voltage: 50V; Case Size: 10x12.5 mm; Packaging: Bulk |
| k4f171611d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| k4f171612d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| k4f160411d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| k4f160412d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| k4f170411d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 47uF; Voltage: 50V; Case Size: 8x11.5 mm; Packaging: Bulk |
| k4f170412d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| k4f160811d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 50V; Case Size: 10x20 mm; Packaging: Bulk |
| k4f160812d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 33uF; Voltage: 50V; Case Size: 8x11.5 mm; Packaging: Bulk |
| k4f170811d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| k4f170812d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| k4f640412d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| k4f660412d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| k4f641612b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | AC 6C 6#16S SKT PLUG |
| k4f641612b-l 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | AC 7C 7#16S SKT PLUG |
| k4f641612b-tc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | AC 7C 7#16S SKT PLUG |
| k4f641612b-tc50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | AC 10C 10#16 SKT PLUG |
| k4f661612b-l 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | AC 4C 4#12 SKT PLUG RoHS Compliant: No |
| k4f661612b-tc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | AC 2C 2#16S SKT PLUG |
| k4f661612b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| k4g323222a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32Mbit SGRAM |
| k4h1g0438a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb A-die SDRAM Specification |
| k4h1g0838a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb A-die SDRAM Specification |
| k4h1g0438m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb M-die DDR SDRAM Specification |
| k4h1g0638c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Stacked 1Gb C-die DDR SDRAM Specification |
| k4h560838f-tc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb F-die DDR400 SDRAM Specification |
| k4h560838f-tcc4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb F-die DDR400 SDRAM Specification |
| k4h560838f-tccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb F-die DDR400 SDRAM Specification |
| k4h560838e-zlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Connector Kit; Contents Of Kit:C14610F0240011 24 position bulkhead housing single latch, C14610B0241021 24 position female insert wire protect, Without spring cover; For Use With:C146 Heavy Duty Industrial Connectors RoHS Compliant: Yes |