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參數(shù)資料
| 型號： | K4F160812D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 33uF; Voltage: 50V; Case Size: 8x11.5 mm; Packaging: Bulk |
| 中文描述： | 200萬× 8位的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數(shù)： | 6/20頁 |
| 文件大小： | 226K |
| 代理商： | K4F160812D |
K4F170811D, K4F160811D
K4F170812D, K4F160812D
CMOS DRAM
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-50
-60
Units
Note
Min
Max
Min
Max
Data set-up time
t
DS
t
DH
t
REF
t
REF
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OEH
t
WTS
t
WTH
t
WRP
t
WRH
t
RASS
t
RPS
t
CHS
0
0
ns
9
Data hold time
10
10
ns
9
Refresh period (2K, Normal)
32
32
ms
Refresh period (4K, Normal)
64
64
ms
Refresh period (L-ver)
128
128
ms
Write command set-up time
0
0
ns
7
CAS to W delay time
36
40
ns
7
RAS to W delay time
73
85
ns
7
Column address to W delay time
48
55
ns
7
CAS precharge to W delay time
53
60
ns
CAS set-up time (CAS -before-RAS refresh)
5
5
ns
CAS hold time (CAS -before-RAS refresh)
10
10
ns
RAS to CAS precharge time
5
5
ns
Access time from CAS precharge
30
35
ns
3
Fast Page cycle time
35
40
ns
Fast Page read-modify-write cycle time
76
85
ns
CAS precharge time (Fast Page cycle)
10
10
ns
RAS pulse width (Fast Page cycle)
50
200K
60
200K
ns
RAS hold time from CAS precharge
30
35
ns
OE access time
13
15
ns
OE to data delay
13
15
ns
Output buffer turn off delay time from OE
0
13
0
15
ns
6
OE command hold time
13
15
ns
Write command set-up time (Test mode in)
10
10
ns
11
Write command hold time (Test mode in)
10
10
ns
11
W to RAS precharge time(C-B-R refresh)
10
10
ns
W to RAS hold time(C-B-R refresh)
10
10
ns
RAS pulse width (C-B-R self refresh)
100
100
us
13,14,15
RAS precharge time (C-B-R self refresh)
90
110
ns
13,14,15
CAS hold time (C-B-R self refresh)
-50
-50
ns
13,14,15
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