參數(shù)資料
型號: K4F160812D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 33uF; Voltage: 50V; Case Size: 8x11.5 mm; Packaging: Bulk
中文描述: 200萬× 8位的CMOS動態(tài)隨機存儲器的快速頁面模式
文件頁數(shù): 2/20頁
文件大小: 226K
代理商: K4F160812D
K4F170811D, K4F160811D
K4F170812D, K4F160812D
CMOS DRAM
V
CC
DQ0
DQ1
DQ2
DQ3
W
RAS
*A11(N.C)
A10
A0
A1
A2
A3
V
CC
V
SS
DQ7
DQ6
DQ5
DQ4
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
PIN CONFIGURATION
(Top Views)
Pin Name
Pin Function
A0 - A11
Address Inputs (4K Product)
A0 - A10
Address Inputs (2K Product)
DQ0 - 7
Data In/Out
V
SS
Ground
RAS
Row Address Strobe
CAS
Column Address Strobe
W
Read/Write Input
OE
Data Output Enable
V
CC
Power(+5V)
Power(+3.3V)
N.C
No Connection (2K Ref. product)
V
CC
DQ0
DQ1
DQ2
DQ3
W
RAS
*A11(N.C)
A10
A0
A1
A2
A3
V
CC
V
SS
DQ7
DQ6
DQ5
DQ4
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
*A11 is N.C for K160811(2)D(5V/3.3V,
2K Ref.
product)
B : 300mil 28 SOJ
F : 300mil 28 TSOP II
K4F17(6)0811(2)D-B
K4F17(6)0811(2)D-F
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