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參數(shù)資料
| 型號： | K4E660412E-JP60 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 16米x 4位的CMOS動態(tài)隨機(jī)存儲器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 18/21頁 |
| 文件大小： | 192K |
| 代理商： | K4E660412E-JP60 |
CMOS DRAM
K4E660412E,K4E640412E
Industrial Temperature
HIDDEN REFRESH CYCLE ( READ )
t
OEZ
DATA-OUT
t
RP
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
OE
V
IH
-
V
IL
-
ROW
ADDRESS
t
RAS
t
RC
t
CHR
t
RCD
t
RSH
t
RAD
t
ASR
t
RAH
t
ASC
t
CRP
Don
′
t care
Undefined
V
OH
-
V
OL
-
DQ0 ~ DQ3(7)
t
WRH
COLUMN
ADDRESS
t
OEA
t
RAS
t
RC
t
CAH
t
RCS
t
AA
t
RAC
t
CLZ
t
CAC
t
CEZ
OPEN
t
RP
t
WEZ
t
REZ
t
OLZ
* In Hidden refresh cycle of 64Mb A-dile & B-die, when CAS signal transits from Low to High, the valid data may be cut off.
t
RAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E660412E-TP50 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E660412E-TP60 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-JI60 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-JP45 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-JP50 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E660412E-TI45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E660412E-TI50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E660412E-TI60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E660412E-TP45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E660412E-TP50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
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