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參數(shù)資料
| 型號： | K4F151611 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬× 16的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數(shù)： | 3/34頁 |
| 文件大?。?/td> | 528K |
| 代理商： | K4F151611 |
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K4F171611D, K4F151611D
K4F171612D, K4F151612D
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Parameter
Symbol
Rating
Units
3.3V
5V
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-0.5 to +4.6
-1.0 to +7.0
V
Voltage on V
CC
supply relative to V
SS
V
CC
-0.5 to +4.6
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
-55 to +150
°
C
Power Dissipation
P
D
1
1
W
Short Circuit Output Current
I
OS
Address
50
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C)
*1 : V
CC
+1.3V/15ns(3.3V), V
CC
+2.0V/20ns(5V), Pulse width is measured at V
CC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at V
SS
Parameter
Symbol
3.3V
5V
Units
Min
Typ
Max
Min
Typ
Max
Supply Voltage
V
CC
3.0
3.3
3.6
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
0
0
0
V
Input High Voltage
V
IH
2.0
-
V
CC
+0.3
*1
0.8
2.4
-
V
CC
+1.0
*1
0.8
V
Input Low Voltage
V
IL
-0.3
*2
-
-1.0
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Max
Parameter
Symbol
Min
Max
Units
3.3V
Input Leakage Current (Any input 0
≤
V
IN
≤
V
IN
+0.3V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-2mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=2mA)
V
OL
-
0.4
V
5V
Input Leakage Current (Any input 0
≤
V
IN
≤
V
IN
+0.5V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-5mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=4.2mA)
V
OL
-
0.4
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4F151611D | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 100uF; Voltage: 50V; Case Size: 10x12.5 mm; Packaging: Bulk |
| K4F171611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F171612D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160412D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4F151611D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F151612D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411C-B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411C-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
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