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參數(shù)資料
| 型號(hào)： | K4F151611 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬(wàn)× 16的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的快速頁(yè)面模式 |
| 文件頁(yè)數(shù)： | 4/34頁(yè) |
| 文件大?。?/td> | 528K |
| 代理商： | K4F151611 |
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K4F171611D, K4F151611D
K4F171612D, K4F151612D
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time, t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS cycling @t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS cycling @t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @t
PC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @t
RC
=min.)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, UCAS, LCAS=0.2V,
DQ=Don
′
t care, T
RC
=31.25us(4K/L-ver), 125us(1K/L-ver),
T
RAS
=T
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=UCAS=LCAS=V
IL
, W=OE=A0 ~ A11=V
CC
-0.2V or 0.2V,
DQ0 ~ DQ15=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
K4F171612D
K4F151612D
K4F171611D
K4F151611D
I
CC1
Don
′
t care
-50
-60
90
80
140
130
90
80
140
130
mA
mA
I
CC2
Normal
L
Don
′
t care
1
1
1
1
2
1
2
1
mA
mA
I
CC3
Don
′
t care
-50
-60
90
80
140
130
90
80
140
130
mA
mA
I
CC4
Don
′
t care
-50
-60
90
80
90
80
90
80
90
80
mA
mA
I
CC5
Normal
L
Don
′
t care
0.5
200
0.5
200
1
200
1
200
mA
uA
I
CC6
Don
′
t care
-50
-60
90
80
140
130
90
80
140
130
mA
mA
I
CC7
L
Don
′
t care
300
200
350
250
uA
I
CCS
L
Don
′
t care
150
150
200
200
uA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4F151611D | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 100uF; Voltage: 50V; Case Size: 10x12.5 mm; Packaging: Bulk |
| K4F171611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F171612D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160412D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4F151611D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F151612D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411C-B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411C-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
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