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參數(shù)資料
| 型號： | K4F151612D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬× 16的CMOS動態(tài)隨機(jī)存儲器的快速頁面模式 |
| 文件頁數(shù)： | 8/34頁 |
| 文件大?。?/td> | 528K |
| 代理商： | K4F151612D |
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K4F171611D, K4F151611D
K4F171612D, K4F151612D
CMOS DRAM
t
CWD
is referenced to the later CAS falling edge at word read-modify-write cycle.
t
CWL
is specified from W falling edge to the earlier CAS rising edge
.
t
CSR
is referenced to the earlier CAS falling edge before RAS transition low.
t
CHR
is referenced to the later CAS rising edge after RAS transition low.
t
CSR
t
CHR
RAS
LCAS
UCAS
16.
15.
14.
13.
t
DS,
t
DH
is independently specified for lower byte DQ(0-7), upper byte DQ(8-15)
If
t
RASS
≥
100us, then RAS precharge time must use
t
RPS
instead of
t
RP
.
For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K)/1024(1K) cycles of burst refresh must be executed
within 64ms/16ms before and after self refresh, in order to meet refresh specification.
For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS refresh should be executed with in 15.6us immediately
before and after self refresh in order to meet refresh specification.
17.
18.
19.
20.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4F151611 | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F151611D | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 100uF; Voltage: 50V; Case Size: 10x12.5 mm; Packaging: Bulk |
| K4F171611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F171612D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4F160411C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411C-B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411C-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160412C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
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