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參數(shù)資料
| 型號： | K4F151612D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬× 16的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數(shù)： | 5/34頁 |
| 文件大?。?/td> | 528K |
| 代理商： | K4F151612D |
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K4F171611D, K4F151611D
K4F171612D, K4F151612D
CMOS DRAM
CAPACITANCE
(T
A
=25
°
C, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A11]
C
IN1
-
5
pF
Input capacitance [RAS, UCAS, LCAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ15]
C
DQ
-
7
pF
Test condition (5V device) : V
CC
=5.0V
±
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : V
CC
=3.3V
±
0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-50
-60
Units
Notes
Min
Max
Min
Max
Random read or write cycle time
t
RC
t
RWC
90
110
ns
Read-modify-write cycle time
133
155
ns
Access time from RAS
t
RAC
t
CAC
50
60
ns
3,4,10
Access time from CAS
15
15
ns
3,4,5
Access time from column address
t
AA
t
CLZ
25
30
ns
3,10
CAS to output in Low-Z
0
0
ns
3
Output buffer turn-off delay
t
OFF
0
13
0
15
ns
6
Transition time (rise and fall)
t
T
t
RP
3
50
3
50
ns
2
RAS precharge time
30
40
ns
RAS pulse width
t
RAS
t
RSH
50
10K
60
10K
ns
RAS hold time
13
15
ns
CAS hold time
t
CSH
t
CAS
50
60
ns
CAS pulse width
13
10K
15
10K
ns
RAS to CAS delay time
t
RCD
t
RAD
20
37
20
45
ns
4
RAS to column address delay time
15
25
15
30
ns
10
CAS to RAS precharge time
t
CRP
t
ASR
5
5
ns
Row address set-up time
0
0
ns
Row address hold time
t
RAH
t
ASC
10
10
ns
Column address set-up time
0
0
ns
11
Column address hold time
t
CAH
t
RAL
10
10
ns
11
Column address to RAS lead time
25
30
ns
Read command set-up time
t
RCS
t
RCH
0
0
ns
Read command hold time referenced to CAS
0
0
ns
8
Read command hold time referenced to RAS
t
RRH
t
WCH
0
0
ns
8
Write command hold time
10
10
ns
Write command pulse width
t
WP
t
RWL
10
10
ns
Write command to RAS lead time
13
15
ns
Write command to CAS lead time
t
CWL
13
15
ns
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 1,2)
相關PDF資料 |
PDF描述 |
|---|---|
| K4F151611 | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F151611D | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 100uF; Voltage: 50V; Case Size: 10x12.5 mm; Packaging: Bulk |
| K4F171611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F171612D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4F160411C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411C-B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411C-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160411D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F160412C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
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