型號 | 廠商 | 描述 |
iwd512 2 3 |
IWD SERIES - DUAL OUTPUT, 10 WATT | |
iwd515 2 3 |
IWD SERIES - DUAL OUTPUT, 10 WATT | |
iwd 2 3 |
IWD SERIES - DUAL OUTPUT, 10 WATT | |
iws1205 2 3 |
IWS SERIES - 10 WATT | |
iws1212 2 3 |
IWS SERIES - 10 WATT | |
iws1215 2 3 |
IWS SERIES - 10 WATT | |
iws1224 2 3 |
RESISTOR 200 OHM .5W CARB COMP | |
iws1248 2 3 |
IWS SERIES - 10 WATT | |
iws2424 2 3 |
IWS SERIES - 10 WATT | |
iws2448 2 3 |
IWS SERIES - 10 WATT | |
iws4824 2 3 |
IWS SERIES - 10 WATT | |
iws4848 2 3 |
IWS SERIES - 10 WATT | |
iws505 2 3 |
IWS SERIES - 10 WATT | |
iws512 2 3 |
IWS SERIES - 10 WATT | |
iws515 2 3 |
IWS SERIES - 10 WATT | |
iws524 2 3 |
IWS SERIES - 10 WATT | |
iws548 2 3 |
IWS SERIES - 10 WATT | |
ixbd4411pc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Interface IC | |
ixbd4412pc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Interface IC | |
ixbd4412pi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Interface IC | |
ixbd4413pc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Interface IC | |
ixbd4413pi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Interface IC | |
ixfr21n100q 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 19A I(D) | TO-247VAR | |
ixfr24n100 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 22A I(D) | TO-247VAR | |
ixfr21n100q 2 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻0.50Ω的N溝道增強型HiPerFET功率MOSFET) |
ixfr50n50 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 43A I(D) | TO-247VAR | |
ixfr55n50 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 48A I(D) | TO-247VAR | |
ixfr58n20q 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 50A I(D) | TO-247VAR | |
ixfr80n20q 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 71A I(D) | TO-247VAR | |
ixfr80n20q 2 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導(dǎo)通電阻28mΩ的N溝道增強型HiPerFET功率MOSFET) |
ixft12n100q 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 12A I(D) | TO-268 | |
ixft12n90q 2 3 4 |
30V N-Channel PowerTrench MOSFET | |
ixft14n100 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 14A I(D) | TO-268 | |
ixft15n100 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 15A I(D) | TO-268 | |
ixfh12n100q 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 12A I(D) | TO-247AD | |
ixfh12n90q 2 3 4 |
30V N-Channel PowerTrench MOSFET | |
ixfh15n100 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 15A I(D) | TO-247AD | |
ixft20n60q 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-268 | |
ixfh20n60q 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247AD | |
ixfh20n60q 2 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓600V,導(dǎo)通電阻0.35Ω的N溝道增強型HiPerFET功率MOSFET) |
ixft21n50f 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | TO-268 | |
ixfh21n50f 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | TO-247AD | |
ixfh24n50s 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-247SMD | |
ixft32n50q 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-268 | |
ixfh30n50s 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 30A I(D) | TO-247VAR | |
ixfh32n50q 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-247AD | |
ixfh32n50s 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-247VAR | |
ixfh35n30s 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 35A I(D) | TO-247VAR | |
ixfh40n30s 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 40A I(D) | TO-264AA | |
ixfh30n50q 2 3 4 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.16Ω的N溝道增強型HiPerFET功率MOSFET) |