參數(shù)資料
型號(hào)： IXFH21N50F
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | TO-247AD
中文描述： 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 21A條（丁）|采用TO - 247AD
文件頁數(shù)： 1/2頁
文件大?。?/td> 103K
代理商： IXFH21N50F
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
21
84
21
A
A
A
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
35
1.5
mJ
J
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
10
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25
°
C
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Mounting torque
TO-247
1.13/10 Nm/lb.in.
TO-247
TO-268
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
500
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20 V, V
DS
= 0
3.0
5.5 V
±
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
50
μ
A
1.5 mA
T
J
= 125
°
C
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
250 m
98884 (1/02)
Advance Technical Information
HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
,
Low Intrinsic R
g
High dV/dt,
Low t
rr
Features
RF capable MOSFETs
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
13.5 MHz industrial applications
Pulse generation
Laser drivers
RF amplifiers
Advantages
Space savings
High power density
TO-247 AD (IXFH)
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
TO-268 (IXFT) Case Style
(TAB)
G
S
IXFH 21N50F
IXFT 21N50F
V
DSS
I
D25
R
DS(on)
t
rr
≤
250 ns
= 500 V
=
21A
=
250m
相關(guān)PDF資料
PDF描述
IXFH24N50S TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-247SMD
IXFT32N50Q TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-268
IXFH30N50S TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 30A I(D) | TO-247VAR
IXFH32N50Q TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-247AD
IXFH32N50S TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-247VAR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFH21N50Q 功能描述:MOSFET 21 Amps 500V 0.25 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH21N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFH22N50P 功能描述:MOSFET 500V 22A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH22N55 功能描述:MOSFET 550V 22A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH22N60P 功能描述:MOSFET 600V 22A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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