- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361009 > IXFR21N100Q (IXYS CORP) N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻0.50Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | IXFR21N100Q |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻0.50Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 18 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS247, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | IXFR21N100Q |
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= I
T
Notes 2, 3
16
22
S
C
iss
C
oss
C
rss
5900
550
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
90
t
d(on)
t
r
t
d(off)
t
f
21
18
60
12
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
R
G
= 1
(External), Notes 2, 3
Q
g(on)
Q
gs
170
38
nC
nC
V
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
Notes 2, 3
Q
gd
75
nC
R
thJC
0.30
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
24
A
I
SM
Repetitive; Note 1
96
A
V
SD
I
F
= I
T
, V
GS
= 0 V, Notes 2, 3
1.5
V
t
rr
250
ns
Q
RM
1.0
C
I
RM
8
A
I
F
= 50A,-di/dt = 100 A/ s, V
R
= 100 V
Note: 1. Pulse width limited by T
2. Pulse test, t 300 s, duty cycle d 2 %
3. I
T
= 10.5A
IXFR 21N100Q
ISOPLUS 247 (IXFR) OUTLINE
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
20.80
15.75
e 5.45 BSC
L
19.81
L1
3.81
Q
5.59
R
4.32
S
13.21
T
15.75
U
1.65
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
.520 .540
.620 .640
.065 .080
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
21.34
16.13
A
A
1
A
2
b
b
1
b
2
C
D
E
20.32
4.32
6.20
4.83
13.72
16.26
3.03
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFR50N50 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 43A I(D) | TO-247VAR |
| IXFR55N50 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 48A I(D) | TO-247VAR |
| IXFR58N20Q | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 50A I(D) | TO-247VAR |
| IXFR80N20Q | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 71A I(D) | TO-247VAR |
| IXFR80N20Q | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導(dǎo)通電阻28mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFR21N100Q_03 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs ISOPLUS247 |
| IXFR230N20T | 功能描述:MOSFET GigaMOS Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR24N100 | 功能描述:MOSFET 1KV 22A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR24N100_08 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFET ISOPLUS247 |
| IXFR24N100Q3 | 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。