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參數(shù)資料
| 型號： | IXFH30N50S |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 30A I(D) | TO-247VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 30A條（?。﹟對247VAR |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 110K |
| 代理商： | IXFH30N50S |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, Note 1
18
28
S
C
iss
C
oss
C
rss
3950 4925
640
210
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
800
260
t
d(on)
t
r
t
d(off)
t
f
35
42
75
20
45
50
95
25
ns
ns
ns
ns
V
GS
R
G
= 2
(External),
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
Q
g(on)
Q
gs
Q
gd
153
26
85
190
32
105
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.35
K/W
K/W
(TO-247)
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
32
A
I
SM
Repetitive; pulse width limited by T
JM
128
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
Q
RM
I
RM
250
ns
μ
C
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
0.75
7.5
A
TO-268 Outline
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b
1
b
2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
.8
.016
.819
.610
.031
.845
.640
20.80
15.75
21.46
16.26
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
.170
242
.216
BSC
BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Note 1: Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
IXFH 30N50Q
IXFT 30N50Q
IXFH 32N50Q
IXFT 32N50Q
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|---|---|
| IXFH30N60P | 功能描述:MOSFET 600V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH30N60Q | 功能描述:MOSFET 30 Amps 600V 0.23 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH320N10T2 | 功能描述:MOSFET TRENCHT2 HIPERFET PWR MOSFET 100V 320A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH32N50 | 功能描述:MOSFET 500V 32A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH32N50 | 制造商:IXYS Corporation 功能描述:MOSFET N TO-247 |
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