參數(shù)資料
型號： IXFR24N100
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 22A I(D) | TO-247VAR
中文描述： 晶體管| MOSFET的| N溝道| 1KV交五（巴西）直| 22A條（?。﹟對247VAR
文件頁數(shù)： 1/2頁
文件大小： 35K
代理商： IXFR24N100
1 - 2
2000 IXYS All rights reserved
Isolated backside*
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
D(RMS)
I
DM
I
AR
T
= 25 C (MOSFET chip capability)
External lead (current limit)
T
C
= 25 C, Note 1
T
C
= 25 C
19
84
21
21
A
A
A
A
E
AR
E
AS
T
C
= 25 C
T
C
= 25 C
60
2.3
mJ
J
dv/dt
I
S
T
J
I
, di/dt 100 A/ s, V
DD
V
DSS
150 C, R
G
= 2
5
V/ns
P
D
T
C
= 25 C
400
W
T
J
T
JM
T
stg
T
L
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
ISOPLUS 247
TM
E153432
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
Low drain to tab capacitance(<30pF)
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
G = Gate
S = Source
D = Drain
* Patent pending
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250 A
1000
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
2.5
4.5 V
I
GSS
V
GS
= 20 V, V
DS
= 0
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
100 A
2 mA
T
J
= 125 C
R
DS(on)
V
= 10 V, I
D
= I
T
Notes 2, 3
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode, Low Q
g,
High dv/dt, Low t
rr
, HDMOS
TM
Family
Preliminary data sheet
IXFR 21N100Q
98723 (05/24/00)
V
DSS
I
D25
R
DS(on)
= 0.50
= 1000 V
= 19 A
t
rr
250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXFR21N100Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻0.50Ω的N溝道增強型HiPerFET功率MOSFET)
IXFR50N50 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 43A I(D) | TO-247VAR
IXFR55N50 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 48A I(D) | TO-247VAR
IXFR58N20Q TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 50A I(D) | TO-247VAR
IXFR80N20Q TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 71A I(D) | TO-247VAR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR24N100_08 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFET ISOPLUS247
IXFR24N100Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR24N50 功能描述:MOSFET 22 Amps 500V 0.23 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR24N50Q 功能描述:MOSFET 22 Amps 500V 0.23 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR24N80P 功能描述:MOSFET 14 Amps 800V 0.42 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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