參數(shù)資料
型號(hào)： IXFT20N60Q
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-268
中文描述： 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 20A條（?。﹟至268
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 52K
代理商： IXFT20N60Q
1 - 2
2000 IXYS All rights reserved
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
Test Conditions
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
Maximum Ratings
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
20
80
20
A
A
A
30
1.5
mJ
J
dv/dt
I
S
T
J
I
DM
, di/dt 100 A/ s, V
DD
V
DSS
,
150 C, R
G
= 2
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25 C
300
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
TO-247 AD (IXFH)
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
98549A (6/99)
Symbol
(T
J
= 25 C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
=
Test Conditions
Characteristic Values
Min. Typ.
Max.
A
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
25
A
1
mA
R
DS(on)
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
0.35
TO-268 (IXFT) Case Style
(TAB)
G
S
HiPerFET
TM
Power MOSFETs
Q-Class
Features
IXYS advanced low gate charge
process
International standard packages
Low gate charge and capacitance
- easier to drive
- faster switching
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
Advanced Technical Information
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Gate Charge and Capacitances
IXFH 20N60Q
IXFT 20N60Q
V
DSS
I
D25
R
DS(on)
=
=
=
600 V
20 A
0.35
t
rr
250ns
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXFH20N60Q TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247AD
IXFH20N60Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓600V,導(dǎo)通電阻0.35Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFT21N50F TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | TO-268
IXFH21N50F TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | TO-247AD
IXFH24N50S TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-247SMD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFT20N80P 功能描述:MOSFET 20 Amps 800V 0.52 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT20N80Q 功能描述:MOSFET 20 Amps 800V 0.42 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT21N50F 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT21N50Q 功能描述:MOSFET 21 Amps 500V 0.25 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT23N60Q 功能描述:MOSFET 23 Amps 600V 0.32W Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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