| 型號 | 廠商 | 描述 |
| m28f201-70xn3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-70xn6r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| m28f201-70xn6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-SSOP 0 to 70 |
| m28f201-90k1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-SSOP 0 to 70 |
| m28f201-90k1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-SSOP 0 to 70 |
| m28f201-90k3r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| m28f201-90k6r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| m28f201-90k6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| m28f201-90n1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| m28f201-90n1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| m28f201-90n3r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-PDIP 0 to 70 |
| m28f201-90n3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-PDIP 0 to 70 |
| m28f201-90n6r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-SO 0 to 70 |
| m28f201-90n6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-SO 0 to 70 |
| m28f201-90xk1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8-Input Positive-NAND Gates 14-SO 0 to 70 |
| m28f201-90xk6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-90xn1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-90xn3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-90xn6r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-120k1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-70xn1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-90xn1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-120xn1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-150xn1r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-70xk6r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-90xk6r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-120xk6r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-150xk6r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-70xk3r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-90xk3r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-120xk3r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f201-150xk3r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| m28f256-15xb1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | SGI 13WS/PS2/PS2 COAX 5 FT SS- |
| m28f256-12xb1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 256K(32K x8, Chip Erase)FLASH MEMORY |
| m28f256-90xb1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 256K(32K x8, Chip Erase)FLASH MEMORY |
| m28f256-15c1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Octal Edge-Triggered D-Type Dual-Rank Flip-Flops With 3-State Outputs 20-SOIC 0 to 70 |
| m28f256-15c3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 256K(32K x8, Chip Erase)FLASH MEMORY |
| m28f256-15c6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 256K(32K x8, Chip Erase)FLASH MEMORY |
| m28f256-15xb3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Octal Edge-Triggered D-Type Dual-Rank Flip-Flops With 3-State Outputs 20-PDIP 0 to 70 |
| m28f256-15xb6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 256K(32K x8, Chip Erase)FLASH MEMORY |
| m28f256-15xc1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 256K(32K x8, Chip Erase)FLASH MEMORY |
| m28f256-15xc3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Octal D-Type Transparent Latches With 3-State Outputs 20-SOIC 0 to 70 |
| m28f256-15xc6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 256K(32K x8, Chip Erase)FLASH MEMORY |
| m28f256-20b1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Octal D-Type Transparent Latches With 3-State Outputs 20-SOIC 0 to 70 |
| m28f256-20b3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP 0 to 70 |
| m28f256-20b6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 256K(32K x8, Chip Erase)FLASH MEMORY |
| m28f256-90c1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-SOIC 0 to 70 |
| m28f256-90c3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 256K(32K x8, Chip Erase)FLASH MEMORY |
| m28f256-90c6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-PDIP 0 to 70 |
| m28f256-90xb3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 256K(32K x8, Chip Erase)FLASH MEMORY |