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參數(shù)資料
| 型號(hào)： | M28F201-70XN6R |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| 中文描述： | 2 MB的256K × 8，芯片擦除閃存 |
| 文件頁數(shù)： | 1/21頁 |
| 文件大?。?/td> | 179K |
| 代理商： | M28F201-70XN6R |
M28F201
2 Mb (256K x 8, Chip Erase) FLASH MEMORY
April 1997
1/21
AI00637C
18
A0-A17
W
DQ0-DQ7
VPP
VCC
M28F201
G
E
VSS
8
Figure 1. Logic Diagram
A0-A17
Address Inputs
DQ0-DQ7
Data Inputs / Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
V
PP
Program Supply
V
CC
Supply Voltage
V
SS
Ground
Table 1. Signal Names
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
5V
±
10%SUPPLY VOLTAGE
12V PROGRAMMING VOLTAGE
FASTACCESS TIME: 70ns
BYTEPROGRAMMING TIME: 10
μ
s typical
ELECTRICALCHIP ERASE in 1s RANGE
LOW POWER CONSUMPTION
– Active Current: 15mAtypical
– Stand-byCurrent: 10
μ
A typical
10,000PROGRAM/ERASE CYCLES
INTEGRATED ERASE/PROGRAM-STOP
TIMER
OTPCOMPATIBLE PACKAGES and PINOUTS
ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– DeviceCode: F4h
DESCRIPTION
The M28F201 FLASH Memory product is a non-
volatilememorieswhich maybe erasedelectrically
at the chip level and programmed byte-by-byte. It
is organised as 256K bytes. It uses a command
register architectureto select the operating modes
and thus provide a simple microprocessor inter-
face. The M28F201 FLASH Memory product is
suitablefor applicationswhere the memoryhas to
be reprogrammed in the equipment. The access
time of 70ns makes the device suitable for use in
high speed microprocessor systems.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28F201-70XN6TR | 8-Input Positive-NAND Gates 14-SSOP 0 to 70 |
| M28F201-90K1R | 8-Input Positive-NAND Gates 14-SSOP 0 to 70 |
| M28F201-90K1TR | 8-Input Positive-NAND Gates 14-SSOP 0 to 70 |
| M28F201-90K3R | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| M28F201-90K6R | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28F201-70XN6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90K1R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90K1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90K3R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90K3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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