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參數(shù)資料
| 型號： | M28F201-70XN6R |
| 廠商： | 意法半導體 |
| 英文描述： | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| 中文描述： | 2 MB的256K × 8，芯片擦除閃存 |
| 文件頁數(shù)： | 5/21頁 |
| 文件大小： | 179K |
| 代理商： | M28F201-70XN6R |
SRAM Interface Levels
EPROM InterfaceLevels
Input Rise and Fall Times
≤
10ns
≤
10ns
Input PulseVoltages
0 to 3V
0.45V to 2.4V
Input and Output TimingRef. Voltages
1.5V
0.8V and 2V
Table 6. ACMeasurement Conditions
AI01275
3V
SRAM Interface
0V
1.5V
2.4V
EPROM Interface
0.45V
2.0V
0.8V
Figure3. ACTesting Input Output Waveform
AI01276
1.3V
OUT
CL= 30pF or 100pF
CL= 30pF for SRAM Interface
CL= 100pF for EPROM Interface
CLincludes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Figure 4. ACTesting Load Circuit
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
Note:
1. Sampled only, not 100% tested.
Table 7. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz )
Read Mode.
The Read Mode is the default at
power up or may be set-up by writing 00h to the
command register. Subsequent read operations
outputdatafromthememory.Thememoryremains
in the Read Mode until a new command is written
to the commandregister.
ElectronicSignatureMode.
Inorder to select the
correct erase and programmingalgorithms for on-
board programming,the manufacturerand device
codesmay be read directly. It is not neccessaryto
apply a high voltage to A9 when using the com-
mand register. The Electronic Signature Mode is
set-up by writing 80h or 90h to the command
register. The following read cycles, with address
inputs00000hor 00001h,outputthe manufacturer
or device codes. The command is terminated by
writing another valid command to the command
register(for exampleReset).
5/21
M28F201
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28F201-70XN6TR | 8-Input Positive-NAND Gates 14-SSOP 0 to 70 |
| M28F201-90K1R | 8-Input Positive-NAND Gates 14-SSOP 0 to 70 |
| M28F201-90K1TR | 8-Input Positive-NAND Gates 14-SSOP 0 to 70 |
| M28F201-90K3R | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| M28F201-90K6R | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28F201-70XN6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90K1R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90K1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90K3R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90K3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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