- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359012 > M28F201-90XN3TR (意法半導(dǎo)體) 2 Mb 256K x 8, Chip Erase FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號(hào)： | M28F201-90XN3TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| 中文描述： | 2 MB的256K × 8，芯片擦除閃存 |
| 文件頁(yè)數(shù)： | 10/21頁(yè) |
| 文件大?。?/td> | 179K |
| 代理商： | M28F201-90XN3TR |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)當(dāng)前第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)
Symbol
Alt
Parameter
M28F201
Unit
-70
-90
V
CC
= 5V
±
10%
EPROM
Interface
Min
V
CC
= 5V
±
10%
EPROM
Interface
Min
Max
Max
t
VPHEL
t
VPHWL
t
WHWH3
t
EHEH3
t
AVWL
t
AVEL
t
WLAX
t
ELAX
t
ELWL
t
WLEL
t
GHWL
t
GHEL
t
DVWH
t
DVEH
t
WLWH
t
ELEH
t
WHDX
t
EHDX
t
WHWH1
t
EHEH1
t
WHWH2
t
EHEH2
t
WHEH
t
EHWH
t
WHWL
t
EHEL
t
WHGL
t
EHGL
t
AVQV
t
ELQX(1)
t
ELQV
t
GLQX(1)
t
GLQV
t
EHQZ
t
GHQZ(1)
t
AXQX
V
PP
High to Chip Enable Low
V
PP
High to Write Enable Low
Write Cycle Time(W controlled)
1
1
μ
s
μ
s
ns
1
1
t
WC
t
WC
t
AS
70
90
Write Cycle Time(E controlled)
70
90
ns
Address Valid to Write Enable Low
0
0
ns
Address Valid to Chip Enable Low
0
0
ns
t
AH
Write Enable Low to Address Transition
30
45
ns
Chip Enable Low to Address Transition
30
45
ns
t
CS
Chip Enable Low to Write Enable Low
0
0
ns
Write Enable Low to Chip Enable Low
0
0
ns
μ
s
μ
s
ns
Output Enable High to WriteEnable Low
0
0
Output Enable High to ChipEnable Low
0
0
t
DS
Input Valid to Write Enable High
30
45
Input Valid to Chip Enable High
30
45
ns
t
WP
Write Enable Low to WriteEnable High (Write Pulse)
30
45
ns
Chip Enable Low to Chip EnableHigh (Write Pulse)
50
60
ns
t
DH
Write Enable High to Input Transition
10
10
ns
Chip Enable High to Input Transition
10
10
ns
μ
s
μ
s
ms
Duration of Program Operation (W contr.)
10
10
Duration of Program Operation (E contr.)
10
10
Duration of Erase Operation (W contr.)
9.5
9.5
Duration of Erase Operation (E contr.)
9.5
9.5
ms
t
CH
Write Enable High to Chip EnableHigh
0
0
ns
Chip Enable High to Write Enable High
0
0
ns
t
WPH
Write Enable High to Write Enable Low
10
20
ns
Chip Enable High to Chip Enable Low
10
20
ns
μ
s
μ
s
ns
Write Enable High to Output EnableLow
6
6
Chip Enable High to Output Enable Low
6
6
t
ACC
t
LZ
t
CE
t
OLZ
t
OE
Addess Valid to data Output
70
90
Chip Enable Low to Output Transition
0
0
ns
Chip Enable Low to Output Valid
70
90
ns
Output Enable Low to Output Transition
0
0
ns
Output Enable Low to Output Valid
25
30
ns
(1)
Chip Enable High to Output Hi-Z
25
30
ns
t
DF
t
OH
Output Enable High to OutputHi-Z
25
30
ns
Address Transition to Output Transition
0
0
ns
Note:
1. Sampled only, not 100% tested
Table 10A. Read/Write Mode AC Characteristics,W and E Controlled
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
10/21
M28F201
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28F201-90XN6R | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-120K1R | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-70XN1R | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90XN1R | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-120XN1R | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28F201-90XN6R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90XN6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F256 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256K(32K x8, Chip Erase)FLASH MEMORY |
| M28F256-10B1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| M28F256-10B3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。