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參數(shù)資料
| 型號： | M28F201-90K3R |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| 中文描述： | 2 MB的256K × 8，芯片擦除閃存 |
| 文件頁數(shù)： | 6/21頁 |
| 文件大小： | 179K |
| 代理商： | M28F201-90K3R |
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±
1
μ
A
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±
10
μ
A
I
CC
Supply Current (Read)
E = V
IL
, f = 10MHz
30
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
Supply Current (Standby) CMOS
E = V
CC
±
0.2V
100
μ
A
I
CC2
(1)
Supply Current (Programming)
During Programming
10
mA
I
CC3
I
CC4(1)
(1)
Supply Current (Program Verify)
During Verify
20
mA
Supply Current (Erase)
During Erasure
20
mA
I
CC5(1)
Supply Current (Erase Verify)
During Erase Verify)
20
mA
I
LPP
Program Leakage Current
V
PP
≤
V
CC
±
10
μ
A
I
PP
Program Current (Read or
Standby)
V
PP
> V
CC
200
μ
A
V
PP
≤
V
CC
±
10
μ
A
I
PP1(1)
Program Current (Programming)
V
PP
= V
PPH
, During Programming
30
mA
I
PP2(1)
Program Current (Program
Verify)
V
PP
= V
PPH
, During Verify
5
mA
I
PP3(1)
Program Current (Erase)
V
PP
= V
PPH
, During Erase
30
mA
I
PP4(1)
Program Current (Erase Verify)
V
PP
= V
PPH
, DuringErase Verify
5
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High VoltageTTL
2
V
CC
+ 0.5
V
Input High Voltage CMOS
0.7 V
CC
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 5.8mA
0.45
V
V
OH
Output High Voltage CMOS
I
OH
= –100
μ
A
V
CC
– 0.4
V
I
OH
= –2.5mA
0.85 V
CC
V
Output High Voltage TTL
I
OH
= –2.5mA
2.4
V
V
PPL
Program Voltage(Read
Operations)
0
6.5
V
V
PPH
Program Voltage(Read/Write
Operations)
11.4
12.6
V
V
ID
A9 Voltage(Electronic Signature)
11.5
13
V
I
ID
(1)
A9 Current (Electronic Signature)
A9 = V
ID
200
μ
A
V
LKO
Supply Voltage, Erase/Program
Lock-out
2.5
V
Note:
1. Not 100% tested. Characterisation Data available.
Table 8. DC Characteristics
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C; V
CC
= 5V
±
10%)
6/21
M28F201
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28F201-90K6R | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| M28F201-90K6TR | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| M28F201-90N1R | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| M28F201-90N1TR | 8-Input Positive-NAND Gates 14-SOIC 0 to 70 |
| M28F201-90N3R | 8-Input Positive-NAND Gates 14-PDIP 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28F201-90K3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90K6R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-90N1 | 功能描述:閃存 TSOP-32 256KX8 90NS RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28F201-90N1R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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