參數(shù)資料
型號(hào): M28F201-150XK3R
廠商: 意法半導(dǎo)體
英文描述: 2 Mb 256K x 8, Chip Erase FLASH MEMORY
中文描述: 2 MB的256K × 8,芯片擦除閃存
文件頁數(shù): 9/21頁
文件大?。?/td> 179K
代理商: M28F201-150XK3R
AI00644
tWHGL
tVPHEL
00000h-00001h
tELQV
tEHQZ
tAVQV
A0-A17
E
G
DQ0-DQ7
DATA OUT
COMMAND
VPP
W
tAXQX
tGHQZ
tGLQV
READ
MANUFACTURER
OR DEVICE
READ
ELECTRONIC
SIGNATURE SET-UP
tWLWH
tWHDX
tDVWH
tGHWL
tELWL
tWHEH
Figure7. Electronic SignatureCommand Waveforms
Program and Program Verify Modes.
The Pro-
gramModeisset-upbywriting40htothecommand
register. This is followed by a second write cycle
which latches the addressand data of the byte to
be programmed.The rising edge of W during this
second cycle starts the programming operation.
ProgrammingisfollowedbyaProgramVerifyofthe
data written.
ProgramVerifyModeis set-upbywritingC0hto the
commandregister.The rising edgeof Wduring the
set-up of the Program Verify Mode stops the Pro-
gramming operation. The following read cycle, of
the address already latched during programming,
is made with an internally generated margin volt-
ageapplied,readingvaliddataindicatesthatallbits
have been programmed.
ResetMode.
Thiscommandis usedtosafelyabort
Erase or Program Modes. The Reset Mode is
set-up and performed by writing FFh two times to
the command register. The command should be
followed by writing a valid command to the the
command register (for example Read).
9/21
M28F201
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